| PART |
Description |
Maker |
| W27E520S-70 W27520 W27E520W-90 W27E520 W27E520S-90 |
64K X 8 ELECTRICALLY ERASABLE EPROM 64K X 8 EEPROM 5V, 70 ns, PDSO20
BOX 3.05X1.51X1.05 W/1 BTN ALMOND
FLASH MEMORY
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| 24C64 TU24C64CP2 TU24C64CP3 TU24C64CS2 TU24C64CS3 |
CMOSIC2-WIREBUS64KELECTRICALLYERASABLEPROGRAMMABLEROM8KX8BITEEPROM
From old datasheet system
CMOS I?C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM
CMOS I2C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| BR24L01AF-W BR24L01AFV-W BR24L01AFVM-W BR24L01 BR2 |
1288 bit electrically erasable PROM
128】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| BR24L08FVM-W BR24L08FJ-W BR24L08FV-W BR24L08F-W BR |
10248 bit electrically erasable PROM
1024】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| BR24L01A-W BR24L01AFJ-W BR24L01AFV-W BR24L01AFVM-W |
128×8 bit electrically erasable PROM
128 bit electrically erasable PROM 128位电可擦除可编程ROM
|
Rohm Co., Ltd.
Rohm CO.,LTD.
|
| TC57512AD-15 TC57512AD-20 |
65536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
|
ETC
List of Unclassifed Manufacturers
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| PALCE29MA16H-35PC |
Electrically-Erasable PLD
|
|
| XLS2864A |
8K x 8 Electrically Erasable PROM
|
Exel Microelectronics
|
| SC22201 SC22201CN SC22101CN SC22201CM SC22101 |
Electrically Erasable Programmable Memories
|
List of Unclassifed Manufacturers
Sierra
ETC[ETC]
|
| ATF22LV10CQZ-30PC ATF22LV10CQZ-30JI ATF22LV10CQZ-3 |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Atmel, Corp.
|
| W27C010 |
128K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond
|
