PART |
Description |
Maker |
K4S281632K |
128Mb K-die SDRAM Specification
|
Samsung semiconductor
|
K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187 ; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No 128Mb SDRAM, 3.3V, LVTTL, 166MHz 128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HYB25D128160AT-6 HYB25D128400AT-7 HYB25D128800AT-7 |
DDR SDRAM Components - 128Mb (8Mx16) DDR333 (2.5-3-3) DDR SDRAM Components - 128Mb (32Mx4) DDR266A (2-3-3) DDR SDRAM Components - 128Mb (16mx8) DDR266A (2-3-3) 128 Mbit Double Data Rate SDRAM
|
Infineon
|
K4H280438F-TC/LA0 K4H280838F-TC/LA2 K4H280838F-TC/ |
128Mb F-die DDR SDRAM Specification 128Mb的的F - DDR SDRAM内存芯片规格 RESISTOR, 2M OHM, 0.063W, 1%
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYS72V32220GU-8-C2 HYS64V16300GU HYS64V16300GU-7.5 |
SDRAM Modules - 256MB PC133 (2-2-2) 2-bank End-of-Life SDRAM Modules - 256MB PC133 (2-2-2) 2-bank (ECC) End-of-Life SDRAM Modules - 128MB PC133 (2-2-2) 1-bank (ECC) End-of-Life SDRAM Modules - 128MB PC133 (2-2-2) 1-bank End-of-Life SDRAM Modules - 256MB PC133 (3-3-3) 2-bank (ECC) End-of-Life SDRAM Modules - 128MB PC133 (3-3-3) 1-bank (ECC) End-of-Life SDRAM Modules - 256MB PC133 (3-3-3) 2-bank End-of-Life SDRAM Modules - 128MB PC133 (3-3-3) 1-bank End-of-Life 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules
|
INFINEON[Infineon Technologies AG]
|
HYS64V1622 HYS64V8200GDL-8 HYS64V16220GDL HYS64V16 |
144 pin SO-DIMM SDRAM Modules 144引脚SO - DIMM内存模块 Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 100uF; Voltage: 35V; Case Size: 10x12.5 mm; Packaging: Bulk 128MB PC133 (3-3-3) 2-bank End-of-Life SDRAM Modules - 128MB PC133 (3-3-3) 2-bank End-of-Life
|
INFINEON[Infineon Technologies AG]
|
MT48LC4M32B2P-6G MT48LC4M32B2F51 MT48LC4M32B2B5-6G |
SDR SDRAM 128Mb: x32 SDRAM MT48LC4M32B2 ?1 Meg x 32 x 4 Banks
|
Micron Technology
|
K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
M366S1724CT0-C1L M366S1724CT0-C1H |
PC100 Unbuffered DIMM(168pin) SPD Specification(128Mb C-die base)
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
EM488M1644VBA-75F |
128Mb Mobile SDRAM
|
http:// ETC[ETC]
|
S80016LK7 |
128Mb :x4 x8 x16 SDRAM 3.3V
|
SPECtek
|