PART |
Description |
Maker |
FQI32N20C FQB32N20C FQB32N20CTM |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET 28 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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FQPF10N20C FQPF10N20CNL |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET 9.5 A, 200 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRFS250 IRFS250B IRFS250BFP001 |
200V N-Channel B-FET / Substitute of IRFS250 & IRFS250A 200V N-Channel MOSFET
|
Fairchild Semiconductor
|
FQU5P20 FQD5P20 FQD5P20TM |
200V P-Channel QFET 200V P-Channel MOSFET 3.7 A, 200 V, 1.4 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
IRHNB8260 IRHNB3260 IRHNB4260 IRHNB7260 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
|
IRF[International Rectifier]
|
FQT5N20 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 1A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 1A条(丁)|的SOT - 223 200V N-Channel MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
FQD10N20 FQU10N20 FQP10N20 FQ10N20 FQD10N20TM FQU1 |
200V N-Channel MOSFET CAP 3900PF 50V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 200 N-Channel MOSFET 200V N-Channel QFET
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor] http://
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FQI10N20C FQB10N20C FQB10N20CTM FQI10N20CTU |
200V N-Channel MOSFET 200V N-Channel Advance QFET C-series
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
IRC640 |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
|
IRF[International Rectifier]
|
IRF9610S IRF9610STRL IRF9610STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A) Power MOSFET(Vdss=-200V/ Rds(on)=3.0ohm/ Id=-1.8A) CAP 3.9PF 50V /-0.1PF C0G SMD-0402 TR-7-PA SN100 HIGH-FREQ 功率MOSFET(减振钢板基本\u003d-00V,的Rds(on)\u003d 3.0ohm,身份证\u003d- 1.8A
|
IRF[International Rectifier] International Rectifier, Corp.
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