| PART |
Description |
Maker |
| HM5225165B HM5225165B-75 HM5225165B-A6 HM5225165B- |
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword ?16-bit ?4-bank/8-Mword ?8-bit ?4-bank /16-Mword ?4-bit ?4-bank PC/133, PC/100 SDRAM
|
Elpida Memory
|
| HY5DU56822AF HY5DU56422AF-J HY5DU561622AF HY5DU564 |
32M X 8 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM - 256Mb
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
|
HYNIX SEMICONDUCTOR INC
|
| HM5257165B HM5257405B-A6 HM5257805BTD-A6 HM5257165 |
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword ?16-bit ?4-bank/16-Mword ?8-bit ?4-bank /32-Mword ?4-bit ?4-bank PC/133, PC/100 SDRAM
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133, PC/100 SDRAM
|
Elpida Memory
|
| HM5425161B HM5425161BTT-10 HM5425161BTT-75A HM5425 |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank/ 16-Mword 】 4-bit 】 4-bank
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank
|
ELPIDA[Elpida Memory]
|
| HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V5 |
32Mx8|3.3V|8K|K|SDR SDRAM - 256M
SDRAM|4X8MX8|CMOS|TSOP|54PIN|PLASTIC
4 Banks X 8M X 8Bit Synchronous DRAM
SDRAM - 256Mb
|
Hynix Semiconductor
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY5DU56422BT-D4 HY5DU56422BT-D43 HY5DU56422BT-J HY |
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 64Mx4 |.5V | 8K的|焦九龙/升| DDR SDRAM内存- 256M
DDR SDRAM - 256Mb
|
Hynix Semiconductor, Inc.
|
| EBD21RD4ADNA-E EBD21RD4ADNA-6B-E EBD21RD4ADNA-7A-E |
2GB Registered DDR SDRAM DIMM (256M words X72 bits, 2 Ranks) 256M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
|
ELPIDA MEMORY INC
DRAM
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| K4S643232F-TL45 K4S643232F-TL55 K4S643232F-TL70 K4 |
IR LED 950NM 18 DEG DOUBLE END
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4S281632M-TL80 K4S281632M K4S281632M-L10 K4S28163 |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S280432C-TC_L1H K4S280432C K4S280432C-TC_L1L K4S |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
