PART |
Description |
Maker |
BAV70WT1 ON0133 |
From old datasheet system CASE 419-02, STYLE 5 SC-70/SOT-323
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MOTOROLA[Motorola, Inc]
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BAL99LT1 ON0111 |
JT 22C 22#22D PIN WALL RECP SILICON, SIGNAL DIODE, TO-236AB CASE 318-08/ STYLE 18 SOT-23 (TO-236AB) CASE 318-08, STYLE 18 SOT-23 (TO-236AB) From old datasheet system
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Motorola Mobility Holdings, Inc. Motorola Inc MOTOROLA[Motorola, Inc]
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DTC114YE DTC114YE_D ON0281 |
CASE 463-01/ STYLE 1 SOT-416/SC-90 CASE 463-01, STYLE 1 SOT-416/SC-90 CASE 463-1, STYLE 1 SOT-16/SC-0 From old datasheet system
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Motorola Inc ON Semi MOTOROLA[Motorola, Inc]
|
2SC4863 2SC4863-5 2SC4863-3 |
TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 70MA I(C) | SOT-323 晶体管|晶体管|叩| 8V的五(巴西)总裁|提供70mA一(c)|SOT - 323 VHF to UHF Wide-Band Low-Noise Amp Applications
|
Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
|
BAS21LT1 |
CASE 318 08, STYLE 8 SOT 23 (TO 236AB)
|
MOTOROLA[Motorola, Inc]
|
BAV70LT1 |
CASE 318-08/ STYLE 9 SOT-23 (TO-236AB)
|
Motorola Inc
|
2N7000 |
CASE 29-04, STYLE 22 TO-92 (TO-226AA) 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 CASE 29-04/ STYLE 22 TO-92 (TO-226AA)
|
Motorola Mobility Holdings, Inc. Motorola, Inc. Motorola Inc MOTOROLA[Motorola, Inc]
|
GA1F4Z GA1F4ZL65 GA1F4ZL64 GA1F4Z-T2 |
Hybrid transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-323 晶体管| 50V五(巴西)总裁| 100mA的一(c)|的SOT - 323
|
NEC[NEC] NEC Corp. NEC, Corp.
|
GN1A4Z GN1A4Z-T2 GN1A4Z-T1 GN1A4ZM67 |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-323 晶体管| 50V五(巴西)总裁| 100mA的一(c)|的SOT - 323 MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR Hybrid transistor
|
NEC, Corp.
|
BAS16LT1 ON0114 |
CASE 31808, STYLE 8 SOT23 (TO236AB) SILICON, SIGNAL DIODE, TO-236AB CASE 31808/ STYLE 8 SOT23 (TO236AB) From old datasheet system
|
Motorola Mobility Holdings, Inc. Motorola Inc MOTOROLA[Motorola, Inc]
|
AP1501A AP1501A-12 AP1501A-12K5 AP1501A-12K5A AP15 |
Adj, 150 Khz, 5 A PWM buck DC/DC converter 150Khz, 5A PWM Buck DC/DC Converter IR Emitting Diode; Mounting Type:Through Hole; LED Color:Clear; Leaded Process Compatible:Yes; Terminal Type:2 Pin Leaded; Color:Clear; Lens Style:(H x Dia) 8.7 x 5.8 mm; Voltage Rating:5V IR Emitting Diode; LED Color:Infrared; Mounting Type:Through Hole; Terminal Type:3 Pin Leaded; Color:Infrared; Lens Style:(H x Dia) 12.5 x 10.0 mm; Voltage Rating:5.5V Leaded Process Compatible: Yes IR Emitting Diode; Mounting Type:Through Hole; LED Color:Blue Gray; Leaded Process Compatible:Yes; Terminal Type:2 Pin Leaded; Color:Blue Gray; Lens Style:(H x W) 8.7 x 5.8 mm; Voltage Rating:5V MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:0.185A; Resistance, Rds on:6R; Voltage, Vgs Rds on measurement:10V; Case style:SOT-23 (TO-236); Current, Id max:0.185A; Current, Idm pulse:.8A; Marking, SMD:6K; Pins, No. RoHS Compliant: Yes MOSFET, P SOT-23MOSFET, P SOT-23; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SOT-23; Current, Id cont:0.58A; Current, Idm pulse:2A; Power, Pd:0.35W; Resistance, Rds on:0.65R; SMD:1; Current, Id MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-385mA; On-Resistance, Rds(on):1.4ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-236; Drain Source On Resistance @ 10V:1.4ohm IR Emitting Diode; Mounting Type:Through Hole; LED Color:Infrared; Leaded Process Compatible:Yes; Terminal Type:2 Pin Leaded; Color:Infrared; Lens Style:(H x W) 8.7 x 5.8 mm; Voltage Rating:5V TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,270MA I(D),TO-226AA RoHS Compliant: Yes IR EMITTER; Wavelength, typ:950nm; Current, forward If:5mA; Angle, viewing:90(degree); Temperature, operating range:-25(degree C) to (degree C) RoHS Compliant: Yes MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-580mA; On-Resistance, Rds(on):650mohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23
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ANACHIP[Anachip Corp]
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