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APT5010B2LC - Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

APT5010B2LC_42219.PDF Datasheet

Part No.

APT5010B2LC APT5010LLC

Description

Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

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ADPOW[Advanced Power Technology]

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Full text search : Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

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