| PART |
Description |
Maker |
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
| 2SK1215 2SK1215D |
Silicon N-Channel MOS FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Silicon N Channel MOS FETs
|
HITACHI[Hitachi Semiconductor]
|
| BF1205C |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
|
| CEM8207 CEM8207ESD |
20V N Channel MOS
Dual N-Channel Enhancement Mode Field Effect Transistor
|
Chino-Excel Technology Corp.
|
| BF998RAW-GS08 BF998RBW-GS08 BF998A-GS08 BF998RA-GS |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
VISHAY SEMICONDUCTORS
Vishay Siliconix
|
| MTMC8E28 |
Dual N-channel MOS FET
|
Panasonic
|
| 3SK290 |
Silicon N Channel MOS FET
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
| UPA1807 UPA1807GR-9JG UPA1807GR-9JG-E1 UPA1807GR-9 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | SO
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
N Channel enhancement MOS FET
|
NEC Corp.
NEC[NEC]
|
| 2SJ358 2SJ358-T1 2SJ358-T2 2SJ358-AZ TC-2491 |
From old datasheet system
P-channel MOS FET (-60V, -3A)
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| BF1109 BF1109R BF1109WR |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
