PART |
Description |
Maker |
IS61LV5128-10 IS61LV5128-10B IS61LV5128-10BI IS61L |
IC,SRAM,512KX8,CMOS,TSOP,44PIN,PLASTIC 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO44 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PBGA36 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PBGA36 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36
|
ISSI[Integrated Silicon Solution, Inc] ISSI [Integrated Silicon Solution, Inc] ISSI[Integrated Silicon Solution Inc] Integrated Silicon Solution Inc Integrated Silicon Solution, Inc.
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IS64LV51216-12TLA3 IS64LV51216-12TA3 IS61LV51216-1 |
512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 512K X 16 STANDARD SRAM, 8 ns, PDSO44
|
Integrated Silicon Solution, Inc. 天津新技术产业园区管理委员会
|
IDT70V7339S IDT70V7339S200BFI IDT70V7339S133DD IDT |
HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V的为512k × 18 SYNCHRONOU开户银行可切换双端口静态RAM.5V的接 HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 512K X 18 DUAL-PORT SRAM, 15 ns, PQFP144 HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 512K X 18 DUAL-PORT SRAM, 10 ns, PQFP144
|
Integrated Device Technology, Inc.
|
AT27LV040A AT27LV040A-12 AT27LV040A-12JC AT27LV040 |
4 Megabit 512K x 8 Low Voltage OTP CMOS EPROM 512K X 8 OTPROM, 120 ns, PDSO32 High Speed CMOS Triple 2-Channel Analog Multiplexers/Demultiplexers 16-SOIC -55 to 125
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
EUP3595QIR1 EUP3595JIR1 EUP3595 |
512K x 32, 3.3V, MCM, Async CMOS 5.0V, High Speed Static RAM 512K x 32, 5V, MCM, Rad Tol, Async Parallel White-LED Driver
|
德信科技股份有限公司 Eutech Microelectronics Inc
|
50S116T 50S116T-5 50S116T-6 50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA SDRAM(512K X 2 BANKS X 16 BITS SDRAM)
|
CERAMATE TECHNOLOGY CO., LTD.
|
LY61L5128LL-15LLI LY61L5128LL-15LLE |
512K X 8 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
IS61LV5128AL-10T-TR IS61LV5128AL-12TI IS61LV5128AL |
512K x 8 HIGH-SPEED CMOS STATIC RAM
|
天津新技术产业园区管理委员会 Integrated Silicon Solution, Inc.
|
AT29LV512-25TI AT29LV512-25TC AT29LV512-25JI |
512K 64K x 8 3-volt Only CMOS Flash Memory High Speed CMOS Logic Quad 2-Input NAND Gates 14-PDIP -55 to 125 High Speed CMOS Logic 4-Bit Binary Ripple Counter 14-SOIC -55 to 125
|
Atmel Corp.
|
AS8NVC512K32QC-45XT AS8NVC512K32Q-45XT AS8NVC512K3 |
512K x 32 Module nvSRAM 5.0V High Speed SRAM with Non-Volatile Storage
|
Austin Semiconductor
|
BH616UV8010AI55 BH616UV8010TI70 BH616UV8010DIP55 B |
Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
|
Brilliance Semiconductor
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