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K4F160411D - 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode

K4F160411D_23453.PDF Datasheet

 
Part No. K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
Description 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode

File Size 223.25K  /  20 Page  

Maker


Samsung Electronic
SAMSUNG[Samsung semiconductor]



JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: K4F160411D-BC60
Maker: SAMSUNG(三星)
Pack: SOJ
Stock: 4200
Unit price for :
    50: $1.11
  100: $1.05
1000: $1.00

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Homepage http://www.samsung.com/Products/Semiconductor/
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 Full text search : 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode


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