PART |
Description |
Maker |
BAL99LT1 ON0111 |
JT 22C 22#22D PIN WALL RECP SILICON, SIGNAL DIODE, TO-236AB CASE 318-08/ STYLE 18 SOT-23 (TO-236AB) CASE 318-08, STYLE 18 SOT-23 (TO-236AB) From old datasheet system
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Motorola Mobility Holdings, Inc. Motorola Inc MOTOROLA[Motorola, Inc]
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BC847ALT1 BC847BLT1 BC847CLT1 BC848BLT1 BC850CLT1 |
CASE 318-08 STYLE 6 SOT-23 (TO-236AB) CASE 318-08, STYLE 6 SOT-23 (TO-236AB) CASE 318-08/ STYLE 6 SOT-23 (TO-236AB) CIR 4C 4#0 FR PIN PLUG High Speed CMOS Logic Triple 3-Input NOR Gates 14-PDIP -55 to 125 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB NPN Silicon General Purpose Transistors NPN硅通用晶体 High Speed CMOS Logic Dual Monostable Multivibrators with Reset 16-SOIC -55 to 125 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
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MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] Motorola Inc Motorola, Inc. Motorola Mobility Holdings, Inc.
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BSV52LT1_D ON0231 |
CASE 318?8, STYLE 6 SOT-3 (TO-36AB) From old datasheet system
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ON Semi
|
MMBFJ309 MMBFJ309LT1 MMBFJ310LT1 ON2105 |
From old datasheet system CASE 318?8, STYLE 10 SOT?3 (TO?36AB) JFET VHF/UHF Amplifier Transistor
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MOTOROLA[Motorola, Inc] ON Semiconductor
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BAV70LT1 ON0132 |
CASE 318-08, STYLE 9 SOT-23 (TO-236AB) From old datasheet system Monolithic Dual Switching Diode Common Cathode
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MOTOROLA[Motorola, Inc] ON Semiconductor
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DTC114YE DTC114YE_D ON0281 |
CASE 463-01/ STYLE 1 SOT-416/SC-90 CASE 463-01, STYLE 1 SOT-416/SC-90 CASE 463-1, STYLE 1 SOT-16/SC-0 From old datasheet system
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Motorola Inc ON Semi MOTOROLA[Motorola, Inc]
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BAT54WT1 ON0130 |
30 VOLTS SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODE From old datasheet system CASE 419?2, STYLE 2 SOT-23 (SC-0)
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Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
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BC308C BC307C BC307B BC307 ON0143 |
Amplifier Transistors(PNP Silicon) 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 CASE 29-04, STYLE 17 TO-2 (TO-26AA) CASE 29-4, STYLE 17 TO-2 (TO-26AA) From old datasheet system
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ONSEMI[ON Semiconductor]
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PST993 PST993C PST993D PST993E PST993F PST993G PST |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No System Reset
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MITSUMI ELECTRIC CO LTD ETC[ETC] Mitsumi Electronics, Corp.
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BC846AWT1 BC847AWT1 ON0161 BC848BWT1 BC848AWT1 BC8 |
General Purpose Transistors(NPN Silicon) 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR CASE 419-2, STYLE 3 SOT-23/SC-0 From old datasheet system
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ONSEMI[ON Semiconductor]
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MMBV2104L MMBV2104LT1 MMBV2104LT3 |
UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE CASE 318-07, 3 PIN
|
Motorola Mobility Holdings, Inc.
|
2N2894 |
CASE 22-03, STYLE 1 TO-18(TO-206AA)
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Motorola, Inc. MOTOROLA[Motorola, Inc]
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