| PART |
Description |
Maker |
| SI7390DP SI7390DP-T1-E3 |
9 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel 30-V (D-S) Fast Switching WFET
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| SI4300DY SI4300DY-TI |
N-Channel Reduced Qg, Fast Switching MOSFET with Schottky
N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode
|
VISAY[Vishay Siliconix]
|
| GT30J324 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| GT50J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA
|
| SI7458DP |
N-Channel 20-V (D-S) Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| SI7108DN-T1-E3 |
N-Channel 20-V (D-S) Fast Switching MOSFET
|
Vishay Siliconix
|
| SI7476DP-T1-E3 SI7476DP |
N-Channel 40-V (D-S) Fast Switching MOSFET
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| SI7448DP SI7448DP-T1 |
N-Channel 20-V (D-S) Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| SI7342DP |
N-Channel 30 V (D-S) Fast Switching MOSFET
|
Vishay
|
| SI4890DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
