| PART |
Description |
Maker |
| HN3G01J HN3G01 E002017 |
N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR
From old datasheet system
|
http://
Toshiba Semiconductor
|
| 2SK711 E001575 |
N CHANNEL JUNCTION TYPE (HIGH/ AM HIGH/ AUDIO FREQUENCY AMPLIFIER APPLICATIONS)
N CHANNEL JUNCTION TYPE (HIGH, AM HIGH, AUDIO FREQUENCY AMPLIFIER APPLICATIONS)
N CHANNEL JUNCTION TYPE (HIGH AM HIGH AUDIO FREQUENCY AMPLIFIER APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK606 |
Silicon N Channel Junction Type
|
Panasonic
|
| 2SK4059TK |
Silicon N Channel Junction Type For ECM
|
Toshiba Semiconductor
|
| 2SK3376TV |
Silicon N Channel Junction Type For ECM
|
Toshiba Semiconductor
|
| 2SK24607 |
Silicon N Channel Junction Type For Constant Current, Impedance
|
Toshiba Semiconductor
|
| 2SK184 |
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
|
Toshiba Semiconductor
|
| 2SK37107 2SK371 |
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK170 K170 |
FET/ Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
FET, Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK369 E001534 |
From old datasheet system
N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SK184 E001400 |
From old datasheet system
N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
