| PART |
Description |
Maker |
| HN58X2464TIE HN58X2464FPIE HN58X2464I |
Two-wire serial interface 8k EEPROM (1-kword 】 8-bit)/16k EEPROM (2-kword 】 8-bit) 32k EEPROM (4-kword 】 8-bit)/64k EEPROM (8-kword 】 8-bit)
|
Renesas Electronics Corporation
|
| HN58X2408FPIAGE HN58X2416FPIAGE HN58X2432FPIAGE HN |
Memory>EEPROM>Serial EEPROM
Two-wire serial interface 8k EEPROM (1-kword 】 8-bit)/16k EEPROM (2-kword 】 8-bit) 32k EEPROM (4-kword 】 8-bit)/64k EEPROM (8-kword 】 8-bit)
|
Renesas Electronics Corporation
|
| GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| AS7C3364PFS36A-166TQI AS7C3364PFS32A AS7C3364PFS32 |
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 9 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 16Vz 15.5mA-Izt 0.05 5uA-Ir 12.2Vr DO41-GLASS 5K/REEL 64K X 36 STANDARD SRAM, 12 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 12 ns, PQFP100
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位）
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
| IDT71V016 IDT71V016SA IDT71V016SA10BF8 IDT71V016SA |
3.3V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 12 ns, PBGA48
High-Performance Current-Mode PWM Controller 14-SOIC -40 to 85 64K X 16 STANDARD SRAM, 10 ns, PDSO44
64K X 16 STANDARD SRAM, 12 ns, PDSO44 0.400 INCH, PLASTIC, SOJ-44
TOOLS,SCREWDRIVERS,TORX,BALLDRIVER T-HANDLE SET,10-PC.INCH SIZES 3/32-3/8" AND STAND,HAND TOOLS,BALLDRIVER® T-HANDLE SETS ,BONDHUS
3.3V 64K x 16 Static RAM
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Integrated Device Techn...
|
| AS7C3364FT36B-80TQIN AS7C3364FT32B AS7C3364FT32B-1 |
From old datasheet system
Shielding Gasket; Gasket Style:D-Shaped; Body Material:Beryllium Copper alloy #C17200; Height:.11"; Length:16"; Mounting Type:Adhesive; Thickness:.0027"; Width:.28" 64K X 32 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 32 STANDARD SRAM, 6.5 ns, PQFP100
3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 36 STANDARD SRAM, 7.5 ns, PQFP100
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| HM628511CJPI12 HM628511HCJPI-12 HM628511HCI |
Memory>Fast SRAM>Asynchronous SRAM
Wide Temperature Range Version 4M High Speed SRAM (512-kword 】 8-bit)
Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit)
|
RENESAS[Renesas Electronics Corporation]
|
| HM628511HC HM628511HCJP-10 HM628511HCLJP-10 |
4M High Speed SRAM (512-kword x 8-bit)
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 35V; Case Size: 16x35.5 mm; Packaging: Bulk 4分高速SRAM12 - KWord的8位）
4M High Speed SRAM (512-kword x 8-bit) 4分高速SRAM12 - KWord的8位）
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| HM628128D HM628128DLP-7UL |
1 M SRAM (128-kword×8-bit)(1M静态RAM (128k字)
STANDARD SRAM, PDIP32
|
Hitachi,Ltd.
|
| HN58X2404T HN58X2402 HN58X2402T HN58X2432FP HN58X2 |
Two-wire serial interface 2k / 4k / 8k / 16k / 32k / 64k EEPROM(8-kword x 8-bit)
|
HITACHI[Hitachi Semiconductor]
|
