| PART |
Description |
Maker |
| STK433-730-E |
2-channel class AB audio power IC 30W 30W
|
Sanyo Semicon Device
|
| IRIS4007K IRIS4007 IR4007 IRIS40X IRISMPS1 |
INTEGRATED SWITCHER 多功能开
DC-DC flyback power supply, IRIS4007(K), 48VIN, 5VOUT, 5A IOUT
30W Output DC-DC Integrated Switchers in a TO-262 (5-Lead) package
30W Output DC-DC Integrated Switchers in a TO-220 (5-Leads) package
|
International Rectifier, Corp.
IRF[International Rectifier]
http://
|
| M67741L 67741L M67741 |
RF POWER MODULE 135-160MHz, 12.5V, 30W, FM MOBILE RADIO
135-160MHz,12.5V,30W, FM MOBILE RADIO
From old datasheet system
135-160MHz /12.5V /30W / FM MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| TDA7265B |
30W 30W stereo amplifier
|
STMicroelectronics
|
| IRFZ44E IRFZ44EPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)
|
IRF[International Rectifier]
|
| STS4DNF60L 6121 STS4DNF60 |
N-Channel 60V-0.045Ω-4A SO-8 STripFET Power MOSFET(N沟道功率MOSFET) N沟道60V的，0.045Ω- 4A条的SO - 8 STripFET功率MOSFET（不适用沟道功率MOSFET的）
N - CHANNEL 60V - 0.045 - 4A SO-8 STripFET TM POWER MOSFET
N-CHANNEL POWER MOSFET
From old datasheet system
N - CHANNEL 60V - 0.045ohm - 4A SO-8 STripFET POWER MOSFET
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ
N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
| IRF1010E IRF1010EPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A 功率MOSFET（减振钢板基本\u003d 60V的，的Rds（on）\u003d 12mohm，身份证\u003d 84A条?
Power MOSFET(Vdss=60V/Rds(on)=12mohm/Id=84A
|
International Rectifier, Corp.
|
| IRFR9014 IRFU9014 IRFR9014TRL |
HEXFET Power MOSFET HEXFET功率MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D-Pak package
-60V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-60V Rds(on)=0.50ohm Id=-5.1A)
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 5.1A
|
IRF[International Rectifier]
Samsung semiconductor
International Rectifier, Corp.
|
