| PART |
Description |
Maker |
| 2SD612K 2SD612 2SB632 2SB632K |
PNP Epitaxial Planar Silicon Transistor for 25V/35V, 2A Low-Frequency Power Amplifier Applications(用于25V/35VA低频功率放大器应用的PNP硅外延平面型晶体
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications
NPN Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications
|
Sanyo Electric Co.,Ltd.
|
| 2SC3807C |
2 A, 25 V, NPN, Si, POWER TRANSISTOR, TO-126
NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| IDT74FCT16260ATPA IDT74FCT16260ATPAB IDT74FCT16260 |
CAP 10UF 35V 10% TANT SMD-7343-31 TR-7-PL SN100% LOWESR-400 快速CMOS 12位的三端口总线交换
Tantalum Electrolytic Capacitor; Capacitance:10uF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:25V; Package/Case:7343-31; Terminal Type:PCB SMT; ESR:0.4ohm; Dielectric Material:Tantalum; Features:Low ESR, Industrial Grade 快速CMOS 12位的三端口总线交换
CAP 10UF 35V 10% TANT SMD-7343-31 TR-7-PL GOLD LOWESR-400 快速CMOS 12位的三端口总线交换
CAP 68UF 10V 20% TANT SMD-6032-28 TR-7-PL SN/PB5% LOWESR-300 快速CMOS 12位的三端口总线交换
CAP 2.2UF 50V 20% TANT SMD-6032-28 TR-7-PL GOLD LOWESR-1500 快速CMOS 12位的三端口总线交换
CAP 2.2UF 50V 10% TANT SMD-6032-28 TR-7-PL SN100% LOWESR-1500
CAP 2.2UF 25V 20% TANT SMD-6032-28 TR-7-PL SN/PB5% LOWESR-2200
CAP 22UF 10V 10% TANT SMD-3528-12 TR-7-PL SN/PB5% LOWESR-6000
CAP 22UF 10V 10% TANT SMD-3528-12 TR-7-PL GOLD LOWESR-6000
CAP 22UF 6V 10% TANT SMD-3528-12 TR-7-PL SN100% LOWESR-3500 ROHS-GUARANTEED
CAP 680UF 4V 10% TANT SMD-7343-31 TR-7-PL SN100% LOWESR-150 ROHS-GUARANTEED
CAP 680UF 4V 10% TANT SMD-7343-31 TR-7-PL SN/PB5% LOWESR-150
CAP 68UF 20V 20% TANT SMD-7343-31 TR-7-PL SN100% LOWESR-200
CAP 68UF 20V 20% TANT SMD-7343-31 TR-7-PL SN/PB5% LOWESR-200
CAP 2.2UF 25V 10% TANT SMD-6032-28 TR-7-PL SN100% LOWESR-2200
FAST CMOS 12-BIT TRI-PORT BUS EXCHANGER
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| W25S243AF-12 W25S243A W25S243A-12 W25S243AD-12 |
DIODE SCHOTTKY QUAD SERIES (RAIL CLAMP) 25V 200mW 0.35V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-363 3K/REEL 64K X 64 STANDARD SRAM, 12 ns, PQFP128
From old datasheet system
64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| MX23C3210 MX23C3210MC-10 MX23C3210MC-12 MX23C3210M |
5 Volt 32-Mbit (4M x 8 / 2M x 16) Mask ROM 2M X 16 MASK PROM, 120 ns, PDSO44
Transformers Only Module 2M X 16 MASK PROM, 100 ns, PDSO44
CAP 33UF 25V 35V TANT SMD-7343-31 TR-7 LOWESR-200
|
PROM
Macronix International Co., Ltd.
|
| 0526035410M 0526050310M 0290016422MH10-R 052601042 |
CAPACITOR 100UF 35V
CAPACITOR 10UF 50V
CAPACITOR 220UF 16V
CAPACITOR 220UF 10V
CAPACITOR 330UF 10V 10V的电330UF
CAPACITOR 47UF 35V 电容47UF 35V
|
Sanyo Electric Co., Ltd.
Atmel, Corp.
|
| GM194 |
N P N S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
|
E-Tech Electronics LTD
|
| TCKIV475DT |
4.7UF, 10%, 35V, TANTALUM CAP, TANT, 35V, 2917 CAPACITOR, TANTALUM, SOLID, POLARIZED, 35 V, 4.7 uF, SURFACE MOUNT, 2916
|
Cal-Chip Electronics
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| NSS35200MR6T1G |
35 V, 5 A, Low VCE(sat) PNP Transistor(35V, 5A, 浣?CE(sat) PNP?朵?绠?
35 V, 5 A, Low VCE(sat) PNP Transistor(35V, 5A, 低VCE(sat) PNP晶体
|
ONSEMI[ON Semiconductor]
|
| BTS725-L1 BTS725-L1E3240 |
2 Channel PROFET Smart High Side Powe...
|
Infineon
|
| ADP3806JRU-12.6-R7 ADP3806JRU-12.6-RL ADP3806JRUZ- |
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 47uF; Voltage: 35V; Case Size: 8x11.5 mm; Packaging: Bulk 高频开关式锂离子电池充电器
High-Frequency Switch Mode Li-Ion Battery Charger 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO24
High-Frequency Switch Mode Li-Ion Battery Charger 高频开关式锂离子电池充电器
|
ANALOG DEVICES INC
Analog Devices, Inc.
|
