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				SIEMENS AG
Part No.	HYB39S64800BT HYB39S64400BT HYB39S64XXX0BTL
OCR Text	...ask for read/write control (x4, x8) ? data mask for byte control (x16) ? auto refresh (cbr) and self refresh ? suspend mode and power down m...4m x4 sdram hyb 39s64400bt-8 q67100-q1838 p-tsop-54-2 (400mil) 125mhz 4b 4m x4 sdram hyb 39s64800...
Description	64mBit Synchronous DRAM(64m4× 2M× 8)同步动态RAM) 64mBit Synchronous DRAM(64m4× 4m× 4)同步动态RAM) 64mBitSynchronous DRAM(64m位同步动态RAM(低功耗版))
File Size	361.32K / 53 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K8D6316UBM-YI07 K8D6316UBM-YI08 K8D6316UBM-YI09 K8D6316UTM-FI09 K8D6316UBM-DC07 K8D6316UBM-YC07 K8D6316UBM-YC09 K8D6316UBM-YC08
OCR Text	x8/4m x16) dual bank nor flash memory revision history revision no. 0.0 1.0 1.1 1.2 1.3 1.4 1.5 1.6 remark preliminary final history initial draft final specification revised - release the stand-by current from typ. 5ua(max. 18ua) to typ. ...
Description	64m Bit (8M x8/4m x16) Dual Bank NOR Flash Memory
File Size	765.81K / 48 Page	View it Online	Download Datasheet

				SIEMENS AG
Part No.	HYB39S64800CT
OCR Text	...ask for read/write control (x4, x8) ? auto refresh (cbr) and self refresh ? suspend mode and power down mode ? 4096 refresh cycles / 64 ms ?...4m x4 sdram hyb 39s64400ct-8 pc100-222 p-tsop-54-2 (400mil) 125 mhz 4b 4m x4 sdram hyb 39s64800ct...
Description	64mBit Synchronous DRAM(64m4× 2M× 8)同步动态RAM)
File Size	352.95K / 52 Page	View it Online	Download Datasheet

				http:// SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K5A3240YTC-T855 K5A3340YBC-T855 K5A3240YBC-T855 K5A3340YTC-T855 K5A3340YTC-T755 K5A3240YTC-T755 K5A3340YBC-T755 K5A3240YBC-T755 K5A3340YBC-T7550 K5A3340YTC-T7550 K5A3240YBC-T8550
OCR Text	...flash memory is organized as 4m x8 or 2m x16 bit and 4mbit sram is organized as 512k x8 or 256k x16 bit. the memory architecture of flash memory is designed to divide its memory arrays into 71 blocks and this provides highly flexible erase ...
Description	SPECIALTY MEMORY CIRCUIT, PBGA69 Multi-Chip Package MEMORY 32M Bit (4mx8/2Mx16) Dual Bank NOR Flash Memory / 4m(512Kx8/256Kx16) Full CMOS SRAM
File Size	877.37K / 45 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60 K4S281632E-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 K4S280432E-TC75 K4S280432E-TL75
OCR Text	x8, x16) CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003 * Samsung Electronics reserves the right to change pr...4m x 8Bit x 4 Banks / 2M x 16Bit x 4 Banks SDRAM FEATURES * JEDEC standard 3.3V power supply * LVT...
Description	128Mb F-die SDRAM Specification 128Mb E-die SDRAM Specification
File Size	142.11K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832F-TC75 K4S280832F-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 TL431CDT K4S280432F-TCL75 K4S280832F-TCL75 K4S280432F-TC75 K4S281632F-TCL60 K4S281632F-TCL75 K4S280432F-TL75
OCR Text	x8, x16) Preliminary CMOS SDRAM 128Mb F-die SDRAM Specification Revision 0.2 November. 2003 * Samsung Electronics reserves the r...4m x 8Bit x 4 Banks / 2M x 16Bit x 4 Banks SDRAM FEATURES * JEDEC standard 3.3V power supply * LVT...
Description	128Mb F-die SDRAM Specification 128Mb的的F - SDRAM内存芯片规格
File Size	143.50K / 14 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75
OCR Text	x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification 54pin sTSOP-II Revision 1.0 August. 2003 * Samsung Electronics reserves the ...4m x 16Bit x 4 Banks SDRAM FEATURES * JEDEC standard 3.3V power supply * LVTTL compatible with mul...
Description	16M x 16 SDRAM, LVTTL, 133MHz 256Mb E-die SDRAM Specification 54pin sTSOP-II
File Size	205.22K / 14 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60 K4S561632E-TL75 K4S560432E-TL75 K4S560432E-TC75 K4S560432E-TC
OCR Text	x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.3 September. 2003 * Samsung Electronics reserves the right to cha...4m x 16Bit x 4 Banks SDRAM FEATURES * JEDEC standard 3.3V power supply * LVTTL compatible with mul...
Description	256Mb E-die SDRAM Specification 54pin sTSOP-II
File Size	196.59K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K4S641632H-UC60 K4S641632H-UC70 K4S641632H-UC75 K4S641632H K4S640832H-UC75 K4S640432H-UC75 K4S640432H-TC K4S640832H-TL75 K4S641632H-UL75 K4S640432H-UC K4S640432H-UL75 K4S640832H-UL75 K4S641632H-UL60 K4S641632H-UL70 K4S641632H-TC75 K4S641632H-TC70 K4S641632H-TC60
OCR Text	x8, x16) CMOS SDRAM 64mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.3 August 2004 * Samsung ...4m x 4Bit x 4 / 2M x 8Bit x 4 / 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES * JEDEC standard 3....
Description	64mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 64芯片与内存规格铅54 TSOP-II免费（符合RoHS D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 64芯片与内存规格铅54 TSOP-II免费（符合RoHS 64mb H-die SDRAM Specification 54 TSOP-II with Pb-Free 64芯片与内存规格铅54 TSOP-II免费 DELTA CONN 14POS PLUG W/O INSERT DELTA CONN 14 POS PLUG BAIL LOCK
File Size	142.44K / 14 Page	View it Online	Download Datasheet

For x8 4m Found Datasheets File :: 793 Search Time::1.812ms
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