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vesm Datasheet PDF File

For vesm Found Datasheets File :: 33 Search Time::1.391ms
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					Toshiba Semiconductor
Part No.	2SK3376MFV
OCR Text	... FR4 board 0.50.05 0.4 vesm 1.Drain 2.Source 3.Gate 2-1L1C JEDEC JEITA TOSHIBA Weight: 1.5mg (typ.) 0.5mm 0.45mm 0.45mm 0.4mm IDSS CLASSIFICATION A-Rank 80 to 200A B-Rank 170 to 300A C-Rank 270 to 480A BK-Rank 150 to 3...
Description	Silicon N Channel Junction Type For ECM
File Size	146.65K / 6 Page	View it Online	Download Datasheet

					Toshiba Corporation Toshiba Semiconductor
Part No.	DF3A3.3FV
OCR Text	...g 150 150 -55 ~ 150 Unit mW C C vesm 1. CATHODE1 2. CATHODE2 3. ANODE Note: Using continuously under heavy loads (e.g. the application of high JEDEC temperature/current/voltage and the significant change in temperature, etc.) may cau...
Description	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.91 to 13.49; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
File Size	124.78K / 3 Page	View it Online	Download Datasheet

					Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
Part No.	DF3A3.6FV
OCR Text	...ing 150 150 -55~150 Unit mW C C vesm 1.CATHODE1 2.CATHODE2 3.ANODE Note: Using continuously under heavy loads (e.g. the application of high JEDEC temperature/current/voltage and the significant change in temperature, etc.) may cause ...
Description	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
File Size	125.00K / 3 Page	View it Online	Download Datasheet

					Toshiba Corporation Toshiba Semiconductor
Part No.	DF3A5.6FV
OCR Text	...ing 150 150 -55~150 Unit mW C C vesm 1.CATHODE1 2.CATHODE2 3.ANODE JEDEC Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA temperature, etc.) may...
Description	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
File Size	154.38K / 3 Page	View it Online	Download Datasheet

					Toshiba Corporation Toshiba Semiconductor
Part No.	DF3A5.6LFV
OCR Text	...e Maximum Ratings (Ta = 25C) vesm 1. CATHODE1 2. CATHODE2 3. ANODE Note: Using continuously under heavy loads (e.g. the application of high JEDEC temperature/current/voltage and the significant change in JEITA temperature, etc.) ...
Description	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.85 to 16.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
File Size	125.13K / 3 Page	View it Online	Download Datasheet

					Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
Part No.	DF3A6.2FV
OCR Text	...ing 150 150 -55~150 Unit mW C C vesm 1.CATHODE1 2.CATHODE2 3.ANODE JEDEC Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA temperature, etc.) may...
Description	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
File Size	125.43K / 3 Page	View it Online	Download Datasheet

					Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
Part No.	DF3A6.2LFV
OCR Text	...e Maximum Ratings (Ta = 25C) vesm 1. CATHODE1 2. CATHODE2 3. ANODE JEDEC Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA temperature, etc.) ...
Description	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 17.56 to 18.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 17.56 to 18.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
File Size	116.64K / 3 Page	View it Online	Download Datasheet

					Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
Part No.	DF3A6.8FV
OCR Text	...ing 150 150 -55~150 Unit mW C C vesm 1.CATHODE1 2.CATHODE2 3.ANODE JEDEC Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA temperature, etc.) may...
Description	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.21 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.21 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
File Size	138.77K / 3 Page	View it Online	Download Datasheet

					Toshiba Corporation Toshiba Semiconductor
Part No.	DF3A6.8LFV
OCR Text	...150* 150 -55~150 Unit mW C C vesm JEDEC Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease i...
Description	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 1.90 to 2.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
File Size	119.34K / 3 Page	View it Online	Download Datasheet

					Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
Part No.	DF3A8.2FV
OCR Text	.... CATHODE1 2. CATHODE2 3. ANODE vesm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliabil...
Description	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD)
File Size	126.52K / 3 Page	View it Online	Download Datasheet

For vesm Found Datasheets File :: 33 Search Time::1.391ms
Page :: | <1> | 2 | 3 | 4 |

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