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  vds-100v Datasheet PDF File

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    Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRFY1310M-T257
Description N-Channel Power MOSFET For HI-REL Application(Vds:100V,Id(max):14A,Rds(on):0.055Ω)(N沟道功率MOS场效应管,HI-REL应用(Vds:100V,Id(max):14A,Rds(on):0.055Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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    TY Semiconductor Co., L...
Part No. SI8822
Description VDS (V) = 20V ID = 7A (VGS=10V) Drain-Source Voltage VDS 20 V

File Size 228.17K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. KE3587-G
Description N-channel:VDS=20V ID=4A Drain-Source Voltage Vds 20V

File Size 211.41K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. 75N08
Description VDS=75V,RDS(on)=0.009 VGS=10V,ID=30A VDS=75V,RDS(on)=0.011VGS=4.5V,ID=20A

File Size 1,062.54K  /  4 Page

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    TY Semiconductor Co., L...
Part No. KO8822
Description VDS (V) = 20V Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -12 V

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    TY Semiconductor Co., Ltd
Part No. KX7N10L
Description VDS (V) = 100V RDS(ON) 350m (VGS = 10V), ID=0.85A RDS(ON) 380m (VGS = 5V), ID=0.85A

File Size 1,251.63K  /  4 Page

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    TY Semiconductor Co., Ltd
Part No. SI2300
Description VDS=20V,RDS(ON)=40m VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m

File Size 96.60K  /  2 Page

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Part No. X25170P8I-2.5 X25170P8-2.5 X25170V14-2.5
Description 30V Single N-Channel HEXFET Power MOSFET in a Super D2-Pak package
MOSFET; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-23A; On Resistance, Rds(on):117mohm; Rds(on) Test Voltage, Vgs:-10V; Leaded
SPI Serial EEPROM

File Size 789.97K  /  15 Page

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    TY Semiconductor Co., Ltd
Part No. KDC6020C
Description N-Channel:VDS=20V ID=5.9A P-Channel:VDS=-20V ID=-4.2A RDS(ON) 55m

File Size 296.74K  /  2 Page

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    24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. 24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST24C16B1TR ST24C16B3TR ST24C16B5TR ST24C16B6TR ST24C16M1TR ST24C16M3TR ST24C16M5TR ST24C16M6TR ST24W16 ST24W16B1TR ST24W16B3TR ST24W16B5TR ST24W16B6TR ST24W16M1TR ST24W16M3TR ST24W16M5TR ST24W16M6TR ST25W16 ST25W16B1TR ST25W16B3TR ST25W16B5TR ST25W16B6TR ST25W16M1TR ST25W16M3TR ST25W16M5TR ST25W16M6TR
Description MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM

File Size 125.39K  /  17 Page

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