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  vds-100v Datasheet PDF File

For vds-100v Found Datasheets File :: 4513    Search Time::0.968ms    
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    FS7KM-12

Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS7KM-12
OCR Text ...olation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 600 30 7 21 35 -55 ~ +150 -55 ~ +150 Unit V V A A W C C Vrms g Feb.199...100V 200V 12 400V 8 8 4 4 0 0 20 40 60 80 100 0 0 0.8 1.6 ...
Description HIGH-SPEED SWITCHING USE

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    FS7KM-5

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS7KM-5
OCR Text ...olation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 250 30 7 21 30 -55 ~ +150 -55 ~ +150 Unit V V A A W C C Vrms g Feb.199...100V 16 TC = 125C 12 200V 8 8 4 4 0 0 4 8 12 16 20 0 ...
Description HIGH-SPEED SWITCHING USE

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    IRF130SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF130SMD
OCR Text ... 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS VDS 15V VGS = 0 VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = 11A VDS = 0.5BVDSS VDD = 50V ID = 11A RG = 7.5W ID = 11A ID = 7A ID = 11A ID = 250mA IDS = 7A VDS = 0.8...
Description N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ...036 VGS = 10V, ID = 22A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 22A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 V GS = 20V nA -100 VGS = -20V 110 ID = 22A 15 nC VDS = 80V 58 VGS = 10V, See Fig. 6 and 13 --- ...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ...036 VGS = 10V, ID = 22A 4.0 V VDS = V GS, ID = 250A --- S V DS = 25V, ID = 22A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 110 ID = 22A 15 nC VDS = 80V 58 VGS = 10V, See Fig. 6 and 13 ---...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

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    IRF1310S

IRF[International Rectifier]
Part No. IRF1310S
OCR Text ...0.04 VGS = 10V, ID = 25A 4.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 25A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 110 ID = 25A 18 nC VDS = 80V 42 VGS = 10V, See Fig. 6 and 13 --- VD...
Description Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

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    IRF1407L IRF1407S IRF1407STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF1407L IRF1407S IRF1407STRR
OCR Text ...D = 1mA X VGS = 10V, ID = 78A T VDS = 10V, ID = 250A VDS = 25V, ID = 78A X VDS = 75V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 150C VGS = 20V VGS ...100V showing the A G integral reverse --- --- 520 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS =...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB

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    IRF140SMD

International Rectifier
Seme LAB
Part No. IRF140SMD
OCR Text ... 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS 1 Min. 100 Typ. Max. Unit V ID = 1mA DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) Static Drain - Source On-State Resistance 1 Reference to 25C ID = 13.9A...
Description N-CHANNEL POWER MOSFET

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    IRF150SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF150SMD
OCR Text ... 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS 1 Min. 100 Typ. Max. Unit V ID = 1mA DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) Static Drain - Source On-State Resistance 1 Reference to 25C ID = 19A I...
Description N-CHANNEL POWER MOSFET

File Size 22.29K  /  2 Page

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    IRF240SMD

SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
Part No. IRF240SMD
OCR Text ... 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS 1 Min. 200 Typ. Max. Unit V ID = 1mA DBVDSS Temperature Coefficient of DTJ Br...100V ID = 13.9A RG = 9.1W ns SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pu...
Description    N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))

File Size 22.29K  /  2 Page

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