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For u-mosiii Found Datasheets File :: 129 Search Time::1.75ms
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				Toshiba Semiconductor
Part No.	SSM6J25FE
OCR Text	u-mosiii) ssm6j25fe high speed switching applications ? optimum for high-density mounting in small packages ? low on-resistance: r on = 260m ? (max) (@v gs = -4 v) r on = 430m ? (max) (@v gs = -2.5 v) absolute ...
Description	High Current Switching Applications
File Size	188.59K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SK3754 2SK375409
OCR Text	u-mosiii) 2sk3754 relay drive, dc ? dc converter and motor drive applications ? 4.5-v gate drive ? low drain-source on resistance: r ds (on) = 71 m ? (typ.) ? high forward transfer admittance: \|y fs \| = 5.0 s (typ.) ? ...
Description	Relay Drive, DC?DC Converter
File Size	127.69K / 3 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM6P26TU
OCR Text	u-mosiii) SSM6P26TU High Speed Switching Applications Unit: mm * * Optimum for high-density mounting in small packages Low on-resistance: Ron = 230m (max) (@VGS = -4 V) Ron = 330m (max) (@VGS = -2.5 V) 0.65 0.65 2.00.1 2.10.1 1.70.1 +...
Description	High Speed Switching Applications
File Size	146.66K / 6 Page	View it Online	Download Datasheet

				Toshiba Corporation Toshiba Semiconductor
Part No.	SSM6P25TU
OCR Text	u-mosiii) SSM6P25TU High Speed Switching Applications Unit: mm * * Optimum for high-density mounting in small packages Low on-resistance: Ron = 260m (max) (@VGS = -4 V) Ron = 430m (max) (@VGS = -2.5 V) 0.65 0.65 2.00.1 1.30.1 1 2 3 C...
Description	Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 2.5 to 2.9; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35 High Speed Switching Applications
File Size	146.22K / 6 Page	View it Online	Download Datasheet

				Toshiba Corporation Toshiba Semiconductor
Part No.	SSM6N25TU
OCR Text	u-mosiii) SSM6N25TU High Speed Switching Applications Unit: mm * * Optimum for high-density mounting in small packages Low on-resistance: Ron = 395m (max) (@VGS = 1.8 V) Ron = 190m (max) (@VGS = 2.5 V) 0.65 0.65 2.00.1 2.10.1 1.70.1 +...
Description	Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 1.6 to 2.0; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35 High Speed Switching Applications
File Size	167.60K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM6N24TU
OCR Text	u-mosiii) SSM6N24TU High Speed Switching Applications Unit: mm * * Optimum for high-density mounting in small packages Low on-resistance: Ron = 145m (max) (@VGS = 4.5 V) Ron = 180m (max) (@VGS = 2.5 V) 0.65 0.65 2.00.1 1.30.1 2.10.1 1...
Description	High Speed Switching Applications
File Size	164.09K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM6K25FE
OCR Text	u-mosiii) SSM6K25FE High Speed Switching Applications * * Optimum for high-density mounting in small packages Low on-resistance: Ron = 395m (max) (@VGS = 1.8 V) Ron = 190m (max) (@VGS = 2.5 V) Unit: mm 1.60.05 1.20.05 0.20.05 0.5 ...
Description	High Speed Switching Applications
File Size	153.75K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM6K24FE
OCR Text	u-mosiii) SSM6K24FE High Speed Switching Applications * * Optimum for high-density mounting in small packages Low on-resistance: Ron = 145m (max) (@VGS = 4.5 V) Ron = 180m (max) (@VGS = 2.5 V) Unit: mm 1.60.05 1.20.05 0.20.05 0.5 ...
Description	High Speed Switching Applications
File Size	153.29K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM6J26FE
OCR Text	u-mosiii) SSM6J26FE High Speed Switching Applications * * Optimum for high-density mounting in small packages Low on-resistance: Ron = 230m (max) (@VGS = -4 V) Ron = 330m (max) (@VGS = -2.5 V) Ron = 980m (max) (@VGS = -1.8 V) Unit: mm ...
Description	High Speed Switching Applications
File Size	153.78K / 5 Page	View it Online	Download Datasheet

For u-mosiii Found Datasheets File :: 129 Search Time::1.75ms
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