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  mrf6522-70 Datasheet PDF File

For mrf6522-70 Found Datasheets File :: 6    Search Time::3.047ms    
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    MRF6522-70 MRF6522-70R306 MRF6522-70R3

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Freescale Semiconductor, Inc
Part No. mrf6522-70 mrf6522-70R306 mrf6522-70R3
OCR Text MRF6522 - 70 Rev. 8, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, ...
Description RF Power Field Effect Transistor

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    Motorola
Part No. mrf6522-70
OCR Text mrf6522-70/D The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband performance of these devices make them ideal for large-sig...
Description mrf6522-70, mrf6522-70R3 921-960 MHz, 70 W, 26 V Lateral N-Channel RF Power MOSFETs

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    MRF6522-70 MRF6522-70R3

Motorola, Inc.
飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
Freescale Semiconductor, Inc
Part No. mrf6522-70 mrf6522-70R3
OCR Text MRF6522 - 70/D The RF MOSFET Line RF Power Field Effect Transistor Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications in ...
Description The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 射频MOSFET线的射频功率场效应晶体管N沟道增强型MOSFET的侧
Motor Driver IC; Driver Type:Motor; No. of Drivers:4; Supply Voltage Max:6V; Output Current Max:400mA; Package/Case:10-DFN/MLP; Leaded Process Compatible:Yes; On Resistance, Rds(on):1.2ohm; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes

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    Motorola, Inc.
Part No. mrf6522-70R3
OCR Text mrf6522-70/D The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband performances of this device makes it ideal for large-signa...
Description RF MOSFETS(RF MOS场效应管)

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    MRF6522--70R3 MRF6522-70R308

Freescale Semiconductor, Inc
FREESCALE SEMICONDUCTOR INC
Part No. MRF6522--70R3 mrf6522-70R308
OCR Text MRF6522--70 Rev. 9, 10/2008 N--Channel Enhancement--Mode Lateral MOSFET Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large--signal, common source amplifier applications in...
Description RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

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    Motorola, Inc.
Part No. MRF6522-60
OCR Text ...atts) 800 90 f, frequency (mhz) 70 0 50 20 0 820 840 860 880 920 1000 0.5 1.5 2.5 3.5 60 50 40 20 0 70 10 30 1.0 2.0 3.0 v dd , supply voltage (volts) 0 16 p out , output power (watts) figure 2. power gain versus output power figure 3. outp...
Description RF MOSFETS(RF MOS场效应管)

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