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SeCoS Halbleitertechnologie SeCoS Halbleitertechnol...
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Part No. |
SSG10N10 SSG10N10-15
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OCR Text |
...eter millimeter ref. min. max. ref. min. max. a 5.80 6.20 h 0.35 0.49 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 ...80v, v gs =0 drain-source leakage current t j =55c i dss - - 5 a v ds =80v, v gs =0 - -... |
Description |
N-Channel Enhancement Mode Power MOSFET N-Ch Enhancement Mode Power MOSFET
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File Size |
1,106.29K /
4 Page |
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it Online |
Download Datasheet |
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Solid State Devices, Inc.
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Part No. |
SFF80N10Z
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OCR Text |
...rce voltage v gs 20 v max. continuous drain current ( package limite d) @ t c = 25oc @ t c = 125oc i d 1 i d 2 55 (n...80v , v gs = 0v, t j = 25 o c v ds = 80v , v gs = 0v, t j = 1 25 o c v ds = 80v... |
Description |
55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET 55 A, 100 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
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File Size |
41.67K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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