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  K4R441869B-NCG6 Datasheet PDF File

For K4R441869B-NCG6 Found Datasheets File :: 3+       Page :: | <1> |   

    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4R271669B-NCK7 K4R271669B-MCK7 K4R271669B-MCK8 K4R271669B-NCK8 K4R271669B-NCG6 K4R271669B-MCG6 K4R441869B-MCK8 K4R441869B-MCK7 K4R441869B-MCG6 K4R441869B-NCG6
Description 256K x 16/18 bit x 32s banks Direct RDRAMTM 256 × 16/18位32秒银行直接RDRAMTM

File Size 314.70K  /  20 Page

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HUA FENG CIRCUIT





    K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K4R271669B-NCK8 K4R441869B-NCK8 K4R271669B K4R271669B-MCG6 K4R271669B-MCK7 K4R271669B-MCK8 K4R441869B-MCG6 K4R441869B-MCK7 K4R441869B-MCK8 K4R441869B-NCG6 K4R441869B-NCK7 K4R441869B-NMCG6 K4R271869B-MCK8 K4R271869B-NCG6
Description 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.

File Size 304.91K  /  20 Page

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    http://
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4R271669B-NMCG6 K4R441869B-NMCG6 K4R441869B-NMCK7 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R441869B-NCK7 K4R441869B-NCK8
Description 256K x 16/18 bit x 32s banks Direct RDRAMTM

File Size 309.32K  /  20 Page

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