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Mitsubishi
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| Part No. |
BCR3PM
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| OCR Text |
...ble below. 5. High sensitivity (igt10ma) is also available. (IGT item1)
Test conditions
Commutating voltage and current waveforms (inductive load)
1. Junction temperature Tj=125C 2. Rate of decay of on-state commutating current (di... |
| Description |
TRIAC,600V V(DRM),3A I(T)RMS,TO-202AB
|
| File Size |
128.20K /
11 Page |
 View
it Online |
Download Datasheet
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
BCR3PM
|
| OCR Text |
...s 0.5C/W. V5. High sensitivity (igt10ma) is also available. (dv/dt) c Min. Unit Test conditions
Voltage class
VDRM (V)
Commutating voltage and current waveforms (inductive load)
8
400
1. Junction temperature Tj=125C 5 V/s ... |
| Description |
LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
|
| File Size |
80.99K /
5 Page |
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it Online |
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| |
|
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Mitsubishi Electric Corporation
|
| Part No. |
BCR3AS-12 BCR3AS-8
|
| OCR Text |
...ble below. 5. High sensitivity (igt10ma) is also available. (IGT item1)
Test conditions
Commutating voltage and current waveforms (inductive load)
1. Junction temperature Tj=125C 2. Rate of decay of on-state commutating current (di... |
| Description |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
| File Size |
140.37K /
10 Page |
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it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric Corporation
|
| Part No. |
BCR3AS
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| OCR Text |
... W V/s
V2. High sensitivity (igt10ma) is also available. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V4. Case temperature is measured on the T2 terminal. (dv/dt) c Min. Unit Test condit... |
| Description |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
| File Size |
90.55K /
5 Page |
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it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric Corporation
|
| Part No. |
BCR5AM
|
| OCR Text |
...s 1.0C/W. V5. High sensitivity (igt10ma) is also available. (IGT item 1)
Voltage class
VDRM (V)
(dv/dt) c Symbol R Min. -- 1. Junction temperature Tj=125C L 5 V/s R -- 2. Rate of decay of on-state commutating current (di/dt)c=-2.5A... |
| Description |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
| File Size |
97.94K /
5 Page |
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it Online |
Download Datasheet |
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igt10ma Found Datasheets File :: 8 Search Time::1.125ms
Page :: | <1> | |
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