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  id-19a Datasheet PDF File

For id-19a Found Datasheets File :: 278    Search Time::0.859ms    
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    IRF150SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF150SMD
OCR Text ....7 6 (0 .0 3 0 ) m in . VDSS ID(cont) RDS(on) FEATURES 100V 19A W 0.070W 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) * HERMETICALLY SEALED SURFACE MOUNT PACKAGE * SMALL FOOTPRINT ...
Description N-CHANNEL POWER MOSFET

File Size 22.29K  /  2 Page

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    CEP6186 CEB6186

Chino-Excel Technology
Part No. CEP6186 CEB6186
OCR Text ...ise notedz Symbol Limit VDS VGS ID IDM PD TJ,Tstg 60 Units V V A A W W/ C C 20 33 132 43 0.28 -55 to 175 Maximum Power Dissipation...19A, VGS = 10V, RGEN = 4.7 15 5 38 10 24 6 6 33 1.5 30 10 76 20 31 ns ns ns ns nC nC nC A V VGS(th) ...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 432.03K  /  4 Page

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    CHM1710PAPT

Chenmko Enterprise Co. Ltd.
Part No. CHM1710PAPT
OCR Text ...uous 100 V V 20 17 ID - Pulsed PD TJ TSTG (Note 3) A 68 50 -55 to 150 -55 to 150 W C C Maximum Power Dissipation at Tc =...19A VGS=10V V DD= 50V I D =19A , VGS = 10 V RGEN= 25 26 3.3 16.2 17 51 16 71 34 nC ton ...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 426.62K  /  3 Page

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    IRF9540 RF1S9540SM FN2282

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. IRF9540 RF1S9540SM FN2282
OCR Text .... . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...19A, RG = 9.1, RL = 2.3, VGS = -10V, (Figures 17, 18) MOSFET Switching Times are Essentially Indepen...
Description 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system

File Size 59.17K  /  7 Page

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    IRFH7934PBF IRFH7934TRPBF

International Rectifier
Part No. IRFH7934PBF IRFH7934TRPBF
OCR Text ...mum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate...19A V Conditions VGS = 0V, ID = 250A VGS = 10V, ID = 24A VGS = 4.5V, ID = 19A V/C Reference t...
Description HEXFET Power MOSFET

File Size 308.50K  /  10 Page

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    19N10

Unisonic Technologies
Part No. 19N10
OCR Text ... 25 V Continuous Drain Current ID 15.6 A Pulsed Drain Current (Note 2) IDM 62.4 A Avalanche Current (Note 2) IAR 15.6 A Single Pulsed Avala...19A, VGS=10V Gate Source Charge QGS (Note 1, 2) Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn...
Description N-CHANNEL POWER MOSFET

File Size 251.94K  /  6 Page

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    IRFN5210

Seme LAB
Part No. IRFN5210
OCR Text ....7 6 (0 .0 3 0 ) m in . VDSS ID(cont) RDS(on) FEATURES -100V -31A 0.060 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 ...19A -124A 125W 1.0W/C 340mJ 4.0V/ns -55 to 150C 300C 1.0C/W Notes 1) Pulse Test: Pulse Width 300...
Description P-CHANNEL POWER MOSFET

File Size 31.61K  /  2 Page

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    KHB019N20F1 KHB019N20F2 KHB019N20P1 KHB019N20P107

KEC(Korea Electronics)
Part No. KHB019N20F1 KHB019N20F2 KHB019N20P1 KHB019N20P107
OCR Text ...pplies. FEATURES VDSS=200V, ID=19A Drain-Source ON Resistance : RDS(ON)=0.18 Qg(typ.)=35nC @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.5...
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
   N CHANNEL MOS FIELD EFFECT TRANSISTOR

File Size 497.69K  /  7 Page

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    BTS949

INFINEON[Infineon Technologies AG]
Part No. BTS949
OCR Text ...A=13.5 V t d = 400 ms, RI = 2 , ID=0,5*19A t d = 400 ms, RI = 2 , ID= 19A DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1 VLD 110 92 E 40/150/56 Thermal resistance junction - case: junction - ambient: SMD versio...
Description Smart Low Side Switches - 60V, 18mΩ, 9,5A TO 220
Smart Lowside Power Switch

File Size 180.06K  /  11 Page

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    ENA1318

Sanyo Semicon Device
Part No. ENA1318
OCR Text ...che Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 30 20 75 225 50 150 --55 to +150 52...19A, VGS=4.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specif...
Description N-Channel Silicon MOSFET General-Purpose Switching Device Applications

File Size 253.04K  /  4 Page

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