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				SAMTEC INC
Part No.	idss-19-D-02-RW EDMS-14-T-02-C EDMD-14-T-02-C EDMD-12-S-02-G EDMS-07-T-02-C EDMD-06-D-02-O IDMD-02-T-02-C IDMD-16-T-02-C EDMD-16-T-02-C EDMD-10-S-02-G EDMD-14-S-02-G EDMS-11-S-02-O EDMS-21-S-02-C EDMD-06-T-02-A EDMD-06-T-02-ST4 EDMD-10-S-02-ST8 EDMD-02-D-02-G
OCR Text	idss?5?? www.samtec.com samtec usa tel: 1-800-samtec-9 or 812-944-6733 fax: 812-948-5047 samtec uk tel: 01236 739292 fax: 01236 727113 samtec germany tel: +49 (0) 89 / 89460-0 fax: +49 (0) 89 / 89460-299 sam...
Description	INTERCONNECTION DEVICE
File Size	111.51K / 2 Page	View it Online	Download Datasheet

				Excelics Semiconductor
Part No.	EPA160B-100F
OCR Text	... f=12ghz vds=8v, ids=50% idss 29.0 31.0 dbm g 1db gain at 1db compression f=12ghz vds=8v, ids=50% idss 4.5 5.5 db pae pow...
Description	8-12V high efficiency heterojunction power FET
File Size	26.06K / 2 Page	View it Online	Download Datasheet

				United Monolithic Semiconductors
Part No.	TC2623
OCR Text	...mbol parameter min typ max unit idss saturated drain current 10 30 60 ma nfmin minimum noise figure 0.3 0.55 db ga associated gain 13 14 db esd protections: electrostatic discharge sensitive device observe handling precautions! free datash...
Description	12GHz Super Low Noise HEMT / AlGaAs/GaAs Field Effect Transistor
File Size	87.11K / 6 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EPA160A
OCR Text	...a hole source grounding idss sorted in 40ma per bin range electrical characteristics (t a = 25 o c) symbols parameters/ test conditions epa160a epa160av unit min typ max min typ max output pow...
Description	High Efficiency Heterojunction Power FET
File Size	50.50K / 2 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BTS118D
OCR Text	...(th) 1.3 0.8 1.7 10 2.2 30 A mW idss 1.5 4 8 12 V A VDS(AZ) 42 55 V Symbol min. Values typ. max. Unit 1@ 6 cm2 cooling area 2Device switched on into existing short circuit (see diagram Determination of I D(lim) ). If the device is in on ...
Description	Smart Lowside Power Switch
File Size	331.57K / 10 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EPA120BV EPA120B
OCR Text	...h via hole source grounding idss sorted in 30ma per bin range electrical characteristics (t a = 25 o c) symbols param eters/tes...
Description	8-12V high efficiency heterojunction power FET
File Size	33.25K / 2 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EPA120EV
OCR Text	...a hole source grounding idss sorted in 30ma per bin range electrical characteristics (t a = 25 o c) symbols parameters /test conditions epa120e epa120ev unit min typ max min typ max output pow...
Description	High Efficiency Heterojunction Power FET
File Size	53.34K / 2 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EPA120D
OCR Text	...linearity and reliability ? idss sorted in 30ma per bin range electrical characteristics (t a = 25 o c) caution! esd sensitive device. symbols parameters/test conditions min typ max unit p 1db output power at 1db compres...
Description	High Efficiency Heterojunction Power FET
File Size	41.53K / 2 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EPA120A
OCR Text	...a hole source grounding idss sorted in 30ma per bin range electrical characteristics (t a = 25 o c) symbols parameters/ test conditions epa120a epa120av unit min typ max min typ max output pow...
Description	High Efficiency Heterojunction Power FET
File Size	51.39K / 2 Page	View it Online	Download Datasheet

For idss Found Datasheets File :: 28435 Search Time::5.782ms
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