high temperature silicon capac pdf Datasheet P1 Description --- IC-ON-LINE


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high temperature silicon capac Datasheet PDF File

For high temperature silicon capac Found Datasheets File :: 150+ Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Zetex Semiconductor PLC
Part No.	FMMV2101TA
Description	DIODE VAR capac 30V 6.8PF SOT-23 6.8 pF, 30 V, silicon, ABRUPT VARIABLE capacITANCE DIODE
File Size	42.06K / 1 Page	View it Online	Download Datasheet

				Motorola
Part No.	MPXA6115A MPXH6115A
Description	MPXA6115A high temperature Accuracy Integrated silicon Pressure Sensor for Manifold Absolute Pressure, Altimeter or Barometer Applications On-Chip Signal Conditioned, temperature Compensated and Calibrated high temperature Accuracy Integrated silicon Pressure Sensor for Measuring Absolute Pressure
File Size	145.11K / 9 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] http:// NXP Semiconductors N.V.
Part No.	1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N4003 1N4007 1N4001 1N4003G 1N4004 1N4005 1N4005G 1N4006G
Description	Rectifiers(整流 1 A, 1000 V, silicon, SIGNAL DIODE (1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction) IC REG VOLT 4.8V 240MA SOT-23 Rectifiers(Rugged glass package/ using a high temperature alloyed construction) Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, silicon, SIGNAL DIODE Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设 Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, silicon, SIGNAL DIODE
File Size	36.25K / 5 Page	View it Online	Download Datasheet

				Diotec Semiconductor AG Diotec Elektronische
Part No.	BYP25A1 BYP25K05 BYP25A05 BYP25A2 BYP25A3 BYP25A4 BYP25A6 BYP25K1 BYP25K2 BYP25K3 BYP25K4 BYP25K6
Description	silicon Press-Fit-Diodes high-temperature diodes 25 A, 300 V, silicon, RECTIFIER DIODE VGA VIDEO CABLE 100 FT MM 25 A, 100 V, silicon, RECTIFIER DIODE silicon Press-Fit-Diodes high-temperature diodes 25 A, 600 V, silicon, RECTIFIER DIODE silicon Press-Fit-Diodes high-temperature diodes 25 A, 400 V, silicon, RECTIFIER DIODE
File Size	187.90K / 2 Page	View it Online	Download Datasheet

				Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. VISAY[Vishay siliconix] Vishay Telefunken
Part No.	BZG05C BZG05C10 BZG05C100 BZG05C11 BZG05C12 BZG05C13 BZG05C15 BZG05C16 BZG05C18 BZG05C20 BZG05C22 BZG05C24 BZG05C27 BZG05C30 BZG05C33 BZG05C36 BZG05C39 BZG05C3V3 BZG05C3V6 BZG05C3V9 BZG05C43 BZG05C47 BZG05C4V3 BZG05C4V7 BZG05C51 BZG05C56 BZG05C5V1 BZG05C5V6 BZG05C62 BZG05C68 BZG05C6V2 BZG05C6V8 BZG05C75 BZG05C7V5 BZG05C82 BZG05C8V2 BZG05C91 BZG05C9V1
Description	high Precision 10 V Reference; Package: CHIPS OR DIE; No of Pins: 8; temperature Range: Commercial 硅的Z -二极 high Precision 10 V Reference; Package: PDIP; No of Pins: 8; temperature Range: Commercial 硅的Z -二极 2.5 V/3.0 V Ultrahigh Precision Bandgap Voltage Reference; Package: PDIP; No of Pins: 8; temperature Range: Industrial 硅的Z -二极 high Precision 10 V Reference; Package: SOIC; No of Pins: 8; temperature Range: Commercial 硅的Z -二极 silicon Z-Diodes 硅的Z -二极 high Precision 10 V Reference; Package: CerDIP; No of Pins: 8; temperature Range: Military silicon Z-Diode(稳压应用电压范围3.3-100V的齐纳二极管) From old datasheet system
File Size	64.33K / 4 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MPXV5050VC6T1
Description	high temperature Accuracy Integrated silicon Pressure Sensor On-Chip Signal Conditioned, temperature Compensated and Calibrated
File Size	176.13K / 8 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MPXV6115VC6U
Description	high temperature Accuracy ntegrated silicon Pressure Sensor On-Chip Signal Conditioned, temperature Compensated and Calibrated
File Size	189.66K / 8 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MP3V5050V MP3V5050VC6T1 MP3V5050VC6U
Description	high temperature Accuracy Integrated silicon Pressure Sensor On-Chip Signal Conditioned, temperature Compensated and Calibrated
File Size	85.25K / 8 Page	View it Online	Download Datasheet

				Motorola
Part No.	MPXV6115VC6U
Description	high temperature Accuracy Integrated silicon Pressure Sensor On-Chip Signal Conditioned, temperature Compensated and Calibrated From old datasheet system
File Size	90.65K / 8 Page	View it Online	Download Datasheet

				CREE POWER
Part No.	W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description	Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
File Size	273.34K / 17 Page	View it Online	Download Datasheet

For high temperature silicon capac Found Datasheets File :: 150+ Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

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