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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
Q62702-F1129 BF998
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| OCR Text |
... 10 mA, f = 200 MHz, gg = 2 mS, gl = 0.5 mS, VG2S = 4 V Power gain (test circuit 2) VDS = 8 V, ID = 10 mA, f = 800 MHz, gg = 3.3 mS, gl = 1 mS, VG2S = 4 V Noise figure (test circuit 1) VDS = 8 V, ID = 10 mA, f = 200 MHz, gg = 2 mS, gl = 0.5... |
| Description |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
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| File Size |
180.18K /
8 Page |
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it Online |
Download Datasheet
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VISAY[Vishay Siliconix]
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| Part No. |
TSDF12830YS
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| OCR Text |
...wer gain GS = 2 mS, BS = BSopt, gl = 0.5 mS, BL = BLopt, f = 200 MHz GS = 2 mS, BS = BSopt, gl = 1 mS, BL = BLopt, f = 400 MHz GS = 3.3 mS, B S = BSopt, gl = 1 mS, BL = BLopt, f = 800 MHz AGC range Noise figure VDS = 5 V, VG2S = 0.5 to 4 V,... |
| Description |
Transistors, RF & AF
Dual - MOSMIC two AGC Amplifiers for TV-Tuner Prestage with Integrated Band Switch for One-Line Switching
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| File Size |
117.70K /
7 Page |
View
it Online |
Download Datasheet |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BF543 Q62702-F1372
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| OCR Text |
... = 4 mA, f = 200 MHz gg = 2 mS, gl = 0.5 mS Noise figure (test circuit) VDS = 10 V, ID = 4 mA, f = 200 MHz gg = 2 mS, gl = 0.5 mS
IDSS - VGS(p)
gfs Cgss Cdg Cdss Gp
9.5 - - - -
12 2.7 18 0.9 22
- - - - -
mS pF fF pF dB
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| Description |
From old datasheet system
Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications)
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| File Size |
97.28K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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