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  fet2-18 Datasheet PDF File

For fet2-18 Found Datasheets File :: 105    Search Time::3.406ms    
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    Renesas Electronics Corporation
Part No. GWS4621L
OCR Text ...ad view, 1.815mm x 1.815mm fet1 fet2 gate2 gate1 source2 source1 s1 s2 g1 g2 12 43 gws4621l fn8784 rev.2.00 page 2 of 8 jun 20, 2017 pin c...18.0 20.5 m t j = +50c 14.0 22.0 24.0 m v gs = 3.1v, i s = 3a t j = +25c 16.0 20.0 24.0 m t j...
Description Dual 20V N-Channel Power MOSFET

File Size 520.99K  /  8 Page

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    BUK9MPP-65PLL

NXP Semiconductors
Part No. BUK9MPP-65PLL
OCR Text ...tions min typ max unit fet1 and fet2 static characteristics r dson drain-source on-state resistance v gs =5v; i d =5a; t j =25c; see fig...18 3587 3986 4385 a/a v (br)dss drain-source breakdown voltage i d = 250 a; v gs =0v; t j =25c 65...
Description Dual TrenchPLUS FET Logic Level FET

File Size 210.75K  /  18 Page

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    BUK9K25-40E

NXP Semiconductors
Part No. BUK9K25-40E
OCR Text ...static characteristics fet1 and fet2 r dson drain-source on-state resistance v gs = 5 v; i d = 5 a; t j = 25 c; fig. 11 - 24 29 m dynami...18.2 a i d drain current t mb = 100 c; v gs = 5 v; fig. 1 - 16.6 a i dm peak drain current t mb ...
Description Dual N-channel 40 V, 29 mlogic level MOSFET

File Size 313.63K  /  13 Page

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    AO4922

Alpha & Omega Semiconductors
Part No. AO4922
OCR Text ...ectrically identical. SOIC-8 FET2 V DS(V) = 30V I D=7.3A (VGS = 10V) <24m (V GS = 10V) <29m (V GS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crs...18.5 1.8 Min 30 0.01 6 0.1 20 0.1 2.4 Typ Max Units V mA A V A m m S V A pF pF pF DYNAMIC PARAME...
Description Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 155.61K  /  8 Page

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    AO4930

Alpha & Omega Semiconductors
Part No. AO4930
OCR Text ...A RDS(ON) < 13.5m RDS(ON) < 16m FET2 V DS(V) = 30V I D=9A (V GS = 10V) <15.8m (V GS = 10V) <23m (V GS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Cr...18 125C 25C trr Is=20A 2.5 2 1.5 1 0.5 0 1000 S Qrr 125C Irm 25C 2 25C Irm (A) trr (ns) 4 125C 6 12 ...
Description Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 171.31K  /  8 Page

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    BUK9MJJ-55PTT

NXP Semiconductors N.V.
Part No. BUK9MJJ-55PTT
OCR Text ...tatic characteristics, FET1 and FET2 ID/Isense 5850 55 6500 - 7150 - A/A V V(BR)DSS drain-source breakdown voltage NXP ...18 19 20 Pinning information Symbol G1 IS1 D1 A1 C1 G2 IS2 D2 A2 C2 D2 KS2 S2 S2 D2 D1 KS1 S1 S1 D1 ...
Description Dual TrenchPLUS logic level FET

File Size 253.22K  /  15 Page

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    AO4922 AO492211

Alpha & Omega Semiconductors
Part No. AO4922 AO492211
OCR Text fet2 v ds 30 30 v gs 12 12 9.0 7.3 7.2 5.9 i dm 40 40 i ar 22 12 e ar 73 22 2.0 2.0 1.3 1.3 t j , t stg -55 to 150 -55 to 150 symbol typ max...18.5m w <29m w (v gs = 4.5v) 100% uis tested 100% rg tested general description the ...
Description Asymmetric Dual N-Channel MOSFET

File Size 236.44K  /  8 Page

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    IAM-91563-BLK IAM-91563-TR1

Agilent(Hewlett-Packard)
Part No. IAM-91563-BLK IAM-91563-TR1
OCR Text ...he lo is applied to the gate of fet2. the purpose of fet2 is to vary the transconductance of fet1 over a highly nonlinear region at the rate...18 is used for 100% rf and dc testing. the test circuit is impedance matched for an rf of 1890 mhz a...
Description 0.8-6 GHz 3V GaAs MMIC _ERo[^

File Size 208.44K  /  16 Page

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    AO4938

Alpha & Omega Semiconductors
Part No. AO4938
OCR Text fet2(n-channel) v ds = 30v 30v i d = 8.8a (v gs =10v) 8a (v gs =10v) r ds(on) r ds(on) < 16m (v gs =10v) < 19m (v gs ...18 22 m w g fs 29 s v sd 0.41 0.5 v i s 3.5 a c iss 1267 1600 pf c oss 308 pf c rss 118 pf r g 1.3 2...
Description 30V Dual N-Channel MOSFET

File Size 613.28K  /  8 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4938
OCR Text fet2(n-channel) v ds = 30v 30v i d = 8.8a (v gs =10v) 8a (v gs =10v) r ds(on) r ds(on) < 16m (v gs =10v) < 19m (v gs ...18 22 m w g fs 29 s v sd 0.41 0.5 v i s 3.5 a c iss 1267 1600 pf c oss 308 pf c rss 118 pf r g 1.3 2...
Description 30V Dual N-Channel MOSFET

File Size 483.44K  /  8 Page

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