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INFINEON[Infineon Technologies AG]
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| Part No. |
SGW50N60HS
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| OCR Text |
...nergy losses include "tail" and diode 2) reverse recovery . T j =1 5 0 C V C C = 40 0 V, I C = 5 0 A, V G E = 0/ 15 V , R G = 6 .8 1) L = ...0A
1ms 10ms 1A DC
Ic
10Hz
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V... |
| Description |
High Speed IGBT in NPT-technology
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| File Size |
327.64K /
11 Page |
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it Online |
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ANALOGICTECH[Advanced Analogic Technologies]
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| Part No. |
AAT8307ITS-T1 AAT8307
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| OCR Text |
...us Source Current (Source-Drain Diode) Maximum Power Dissipation
1
A
TA = 25C TA = 70C
W C
Operating Junction and Storage Tempe...0A RDS(ON) Drain-Source ON-Resistance 2 VGS=-2.5V, ID=-4.6A ID(ON) On-State Drain Current 2 VGS=-4.5... |
| Description |
From old datasheet system
20V P-Channel Power MOSFET
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| File Size |
156.85K /
6 Page |
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it Online |
Download Datasheet |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO4906
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| OCR Text |
diode dual n-channel enhancement mode field symbol unit s v ds v v gs v t a =25c t a =70c i dm v ka v t a =25c t a =70c i fm t a =25c t a =7...0a i rm maximum reverse leakage current v r =30v v r =30v, t j =125c v r =30v, t j =150c output capa... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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| File Size |
203.45K /
5 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
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| Part No. |
SGB15N120
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| OCR Text |
...ergy losses include ?tail? and diode reverse recovery. -1.92.6 mj switching characteristic, inductive load, at t j =150 c value paramet...0a 10a 20a 30a 40a 50a 60a 70 a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0.1a 1... |
| Description |
Fast S-IGBT in NPT-technology( NPT技术中的快S-IGBT) 快速的S -不扩散核武器条约IGBT的技术（不扩散技术中的快速第S - IGBT的）
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| File Size |
415.74K /
12 Page |
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it Online |
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Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
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| Part No. |
3N60L-B-TA3-T 3N60 3N60-A-TA3-T 3N60-B-TA3-T 3N60L-A-TA3-T
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| OCR Text |
...imited by TJMAX EAR 7.5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation PD 75 W Junction Temperature TJ +150 Storage ...0A, VGS= 10 V (Note 4, 5)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-... |
| Description |
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 3安培00/650伏特N沟道功率MOSFET
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| File Size |
158.82K /
8 Page |
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it Online |
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International Rectifier, Corp.
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| Part No. |
IRF5803D2PBF
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| OCR Text |
...et ? power mosfet and schottky diode ideal for buck regulator applications p-channel hexfet ? low v f schottky rectifier so-8 f...0a, v gs = 0v t rr reverse recovery time (body diode) ??? 27 40 ns t j = 25c, i f = -2.0a q rr re... |
| Description |
FETKY ㈢MOSFET & Schottky Diode FETKY㈢MOSFET
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| File Size |
143.87K /
11 Page |
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it Online |
Download Datasheet |
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