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bits 4mx16 Datasheet PDF File

For bits 4mx16 Found Datasheets File :: 100 Search Time::1.156ms
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				ETRON[Etron Technology, Inc.] ETRON[Etron Technology Inc.]
Part No.	EM658160 EM658160TS-33 EM658160TS-35 EM658160TS-4 EM658160TS-5 EM658160TS-6 EM658160TS-7 EM658160TS-8
OCR Text	...formed by inverting the address bits in the sequence shown in the following table. Data n Data 0 Data 1 Data 2 Data 3 Data 4 Data 5 Data 6 D...4mx16 DDR SDRAM EM658160 CAS Latency Field (A6~A4) This field specifies the number of clock cy...
Description	4M x 16 DDR Synchronous DRAM (SDRAM)
File Size	154.94K / 26 Page	View it Online	Download Datasheet

				ALSC[Alliance Semiconductor Corporation] ETC
Part No.	AS4LC4M16S0 AS4LC4M16S0-10FTC AS4LC4M16S0-10TC AS4LC4M16S0-75TC AS4LC4M16S0-8TC AS4LC8M8S0 AS4LC8M8S0-10FTC AS4LC8M8S0-10TC AS4LC8M8S0-75TC AS4LC8M8S0-8TC
OCR Text	...anization - 2,097,152 words x 8 bits x 4 banks (8Mx8) - 1,048,576 words x 16 bits x 4 banks (4mx16) * Fully synchronous - All signals referenced to positive edge of clock * Four internal banks controlled by BA0/BA1 (bank select) * High spee...
Description	3.3V 4mx16 and 8Mx8 CMOS synchronous DRAM
File Size	387.58K / 24 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K4S641632H-UC60 K4S641632H-UC70 K4S641632H-UC75 K4S641632H K4S640832H-UC75 K4S640432H-UC75 K4S640432H-TC K4S640832H-TL75 K4S641632H-UL75 K4S640432H-UC K4S640432H-UL75 K4S640832H-UL75 K4S641632H-UL60 K4S641632H-UL70 K4S641632H-TC75 K4S641632H-TC70 K4S641632H-TC60
OCR Text	...832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 word...4mx16 Row Address A0~A11 A0~A11 A0~A11 Column Address A0-A9 A0-A8 A0-A7 Row & Column addres...
Description	64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 64芯片与内存规格铅54 TSOP-II免费（符合RoHS D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 64芯片与内存规格铅54 TSOP-II免费（符合RoHS 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free 64芯片与内存规格铅54 TSOP-II免费 DELTA CONN 14POS PLUG W/O INSERT DELTA CONN 14 POS PLUG BAIL LOCK
File Size	142.44K / 14 Page	View it Online	Download Datasheet

				Mosel Vitelic Corp Mosel Vitelic, Corp
Part No.	V58C365164S
OCR Text	...ecture that prefetches multiple bits and then synchronizes the output data to a system clock All of the control, address, circuits are synch...4mx16, 4K Refresh 4 Banks SSTL COMPONENT REV LEVEL 66 Pin Plastic TSOP-II PIN CONFIGURATION To...
Description	64 Mbit DDR SDRAM 4M X 16, 3.3VOLT
File Size	500.70K / 44 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd.
Part No.	K4D551638F-TC33 K4D551638F-TC50 K4D551638F-TC36 K4D551638F K4D551638F-TC K4D551638F-TC60 K4D551638F-TC40
OCR Text	... The K4D551638F is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits, fabricated with...4mx16 Output Buffer 2-bit prefetch Sense AMP Refresh Counter Row Buffer Row Decoder 4mx16 4mx16 4Mx1...
Description	256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
File Size	204.60K / 16 Page	View it Online	Download Datasheet

				ETC[ETC]
Part No.	AD484M1644VTA AD484M1644VTA-10I AD484M1644VTA-10L AD484M1644VTA-10LI AD484M1644VTA-8I AD484M1644VTA-8L AD484M1644VTA-8LI AD484M1644VTA-6 AD484M1644VTA-7L AD484M1644VTA-7I AD484M1644VTA-7 AD484M1644VTA-5.5 AD484M1644VTA-15 AD484M1644VTA-7LI
OCR Text	... 46 48 Density 16M : 16 Mega bits 8M : 8 Mega bits 4M : 4 Mega bits 2M : 2 Mega bits 1M : 1 Mega Bit Organization 8 : x8 9 : x9 16 : x16 ...4mx16 ) Description 64Mb SDRAM The AD484M1644VTA is Synchronous Dynamic Random Access Memory (...
Description	Ascend Semiconductor Corporation(64Mb SDRAM)
File Size	83.40K / 20 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	M366S0823D M366S0823DTS
OCR Text	...es (2K-bit) SDRAM 12 8 1 row 64 bits LVTTL 10ns 6ns Non parity 15.625us, support self refresh x16 None tCCD = 1CLK 1, 2, 4, 8 & full page 4 banks 2&3 0 CLK 0 CLK Non-buffered, non-registered & redundant addressing +/- 10% voltage tolerance,...
Description	PC100 Unbuffered DIMM(168pin) SPD Specification(64Mb D-die base)
File Size	55.06K / 7 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4H560838F K4H561638F-UCCC K4H561638F-UCC4 K4H560838F-UC K4H560838F-UCC4 K4H560838F-UCCC
OCR Text	...38F / K4H561638F is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 8 / 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow e...
Description	256Mb F-die DDR400 SDRAM Specification 256Mb的的F -模具支持DDR400内存规格
File Size	168.93K / 19 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4H561638F-TCCC K4H561638F-TCC4 K4H560838F-TC K4H560838F-TCC4 K4H560838F-TCCC
OCR Text	...38F / K4H561638F is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 8 / 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow e...
Description	256Mb F-die DDR400 SDRAM Specification 256Mb的的F -模具支持DDR400内存规格
File Size	168.74K / 19 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4H561638F-UC K4H561638F-UC_LB3 K4H560838F-UC_LA2 K4H560838F-UC_LAA K4H560838F-UC_LB0 K4H560838F-UC_LB3 K4H561638F-UC_LA2 K4H561638F-UC_LAA K4H561638F-UC_LB0 K4H560838F-UC/LA2 K4H560838F-UC/LAA K4H560838F-UC/LB0 K4H560838F-UC/LB3 K4H561638F-UC/LA2 K4H561638F-UC/LAA K4H561638F-UC/LB0 K4H561638F-UC/LB3
OCR Text	...38F / K4H561638F is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow ext...
Description	256Mb F-die DDR SDRAM Specification
File Size	203.61K / 23 Page	View it Online	Download Datasheet

For bits 4mx16 Found Datasheets File :: 100 Search Time::1.156ms
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