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  60a 400v Datasheet PDF File

For 60a 400v Found Datasheets File :: 2335    Search Time::1.312ms    
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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text 6 Q2 D2 12 Q4 D4 18 Q3 D3 15 10 Q6 D6 Q5 D5 16 IGBT SIP MODULE Features * Short Circuit Rated UltraFast: Optimized for high operating f...0A I F = 5.0A 20 100 di f/dt - (A/s) 1000 1 100 1000 di f /dt - (A / s) Fig. 14...
Description IGBT SIP MODULE

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    GA125TS120U

IRF[International Rectifier]
Part No. GA125TS120U
OCR Text ...C Gate Threshold Voltage 3.0 -- 6.0 VCE = 6.0V, IC = 1.5mA Temperature Coeff. of Threshold Voltage -- -11 -- mV/C VCE = 6.0V, IC = 1.5mA For...0A I F = 1 25 A I F = 6 2.5A 100 T J = 125 C T J = 25C QRR - ( nC) 3.5 12000 8000 4...
Description 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

File Size 220.37K  /  10 Page

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    GA50TS120U

IRF[International Rectifier]
Part No. GA50TS120U
OCR Text ...C Gate Threshold Voltage 3.0 -- 6.0 VCE = 6.0V, IC = 500A Temperature Coeff. of Threshold Voltage -- -11 -- mV/C VCE = 6.0V, IC = 500A Forwa...0A I F = 25 A QRR - ( nC) 10 1.0 2.0 3.0 4.0 6000 4000 2000 0 500 1000 1500 ...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 208.85K  /  10 Page

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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ...) Gate Threshold Voltage 3.0 -- 6.0 VCE = 6.0V, IC = 750A -11 -- mV/C VCE = 6.0V, IC = 750A VGE(th)/TJ Temperature Coeff. of Threshold Volta...0A I F = 7 5A I F = 3 7A I F = 7 5A I F = 3 7A - (A) IRRM 150 trr - (n s) 120 80 ...
Description    Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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    IR2110L

IRF[International Rectifier]
Part No. IR2110L
OCR Text 6.085 IR2110L4 HIGH AND LOW SIDE DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +400v Tolera...0A VIN =VIH, IO = 0A VB = VS = 400v VIN =0V or VDD VIN =0V, or VDD VIN =0V, or VDD VIN = VDD V IN = ...
Description HIGH AND LOW SIDE DRIVER

File Size 131.31K  /  14 Page

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ...S = 400v 18 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 8.0A ns --- RG = 9.1 --- RD = 31,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400v, = 1.0MHz ...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 125.49K  /  10 Page

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ... for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 8.0 5.1 32 125 1.0 30 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m) ...0A 9.0 nC VDS = 400v 18 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 8.0A ns --- RG = 9.1 -...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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    IRF840B IRFS840B IRFS840 IRF840

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF840B IRFS840B IRFS840 IRF840
OCR Text ... -------- 22 65 125 75 41 6.5 17 55 140 260 160 53 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ra...0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 8.0A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25...
Description 500V N-Channel MOSFET

File Size 908.43K  /  10 Page

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text ...S = 400v 19 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 8.0A ns --- RG = 9.1 --- RD = 30, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 1100 --- VGS = 0V 170 --- pF VDS = 25V 18 --- = 1.0MHz, See Fig. 5 Sourc...
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)

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    HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723

http://
FAIRCHILD[Fairchild Semiconductor]
INTERSIL[Intersil Corporation]
Fairchild Semiconductor Corporation
Part No. HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723
OCR Text 6 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage...0A). The HGT1S20N60B3S, HGTP20N60B3 and HGTG20N60B3 were tested per JEDEC standard No. 24-1 Method f...
Description 40A/ 600V/ UFS Series N-Channel IGBTs
40A, 600V, UFS Series N-Channel IGBTs
From old datasheet system
XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN
40 A, 600 V, N-CHANNEL IGBT

File Size 137.79K  /  6 Page

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