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Infineon Technologies AG
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Part No. |
IHW15T120
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OCR Text |
...ent 0v 2v 4v 6v 8v 10v 12v 0a 5a 10a 15a 2 0a 2 5a 3 0a 3 5a 4 0a 25c t j =150c v ce(sat), collector - emitt saturation voltage -50c 0c 50c 100c 0,0v 0,5v 1,0v 1,5v 2,0v 2,5v 3,0v i c =15a i c =30a i c =8a i c =5a v ge , gate-emitte... |
Description |
IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
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File Size |
356.52K /
15 Page |
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it Online |
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Mitsubishi Electric Corporation
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Part No. |
QM75DY-24
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OCR Text |
... open v eb =7v i c =75a, i b =1.5a Ci c =75a (diode forward voltage) i c =75a, v ce =5v v cc =600v, i c =75a, i b1 =Ci b2 =1.5a transistor part (per 1/2 module) diode part (per 1/2 module) conductive grease applied (per 1/2 module) typ. ... |
Description |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
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File Size |
82.55K /
5 Page |
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it Online |
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INTERSIL[Intersil Corporation] Intersil, Corp.
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Part No. |
HGTP5N120BN HGT1S5N120BNS FN4599
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OCR Text |
...ion Voltage
VCE(SAT)
IC = 5a, VGE = 15V
TC = 25oC TC = 150oC
Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current S...1200v IC = 5a, VCE = 0.5 BVCES IC = 5a, VCE = 0.5 BVCES VGE = 15V VGE = 20V
Gate to Emitter Plate... |
Description |
From old datasheet system 21A, 1200v, NPT Series N-Channel IGBTs(21A, 1200v NPT系列N沟道绝缘栅双极型晶体 21A/ 1200v/ NPT Series N-Channel IGBTs XC9536-7VQ44I - NOT RECOMMENDED for NEW DESIGN 21 A, 1200 V, N-CHANNEL IGBT, TO-263AB
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File Size |
81.48K /
7 Page |
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it Online |
Download Datasheet
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Price and Availability
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