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Micron Technology, Inc.
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Part No. |
MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128L36P1 MT55L128V32P1
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Description |
3.3V I/O28K x 32,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18,流量通过ZBT SRAM的电压(3.3V输入/输出Mb的流通式同步静态存储器 3.3V I/O28K x 36,Flow-Through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36,流量通过ZBT SRAM的电压(3.3V或输输出Mb的流通式同步静态存储器 2.5V I/O28K x 32,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32,流量通过ZBT SRAM的电压(2.5V输入/输出Mb的流通式同步静态存储器
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File Size |
426.03K /
25 Page |
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it Online |
Download Datasheet
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Integrated Device Technology, Inc.
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Part No. |
IDT72255L12G IDT72255L15G IDT72255L25G IDT72265L10G IDT72265L12G IDT72265L15G IDT72265L20G IDT72255L10G IDT72255L20G IDT72265L25G IDT72255L20PF IDT72265L20GB IDT72265L25GB IDT72265L15PFB IDT72255L12TF IDT72255L12PFB IDT72255L10GB IDT72255L20PFB
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Description |
Bi-Directional Triode Thyristor Planar Silicon; Package: TO-220F; No of Pins: 3; Container: Rail COVERS DUCT TO PROTECT WIRES, IMPROVE AESTHETICS ANDPROVIDE GREATER WIRE CAPACITY CMOS SUPERSYNC FIFOO 8,192 x 18, 16,384 x 18 8K X 18 OTHER FIFO, 9 ns, PQFP64 CMOS SUPERSYNC FIFOO 8,192 x 18, 16,384 x 18 的CMOS SUPERSYNC FIFOO 8192 × 186,384 × 18
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File Size |
401.58K /
30 Page |
View
it Online |
Download Datasheet
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