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INFINEON[Infineon Technologies AG]
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| Part No. |
SPW12N50C3
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| OCR Text |
...ingle pulse
I D = 5.5 A, VDD = 50 V
I D puls EAS
34.8 340 0.6 11.6 6 20
30
mJ
Avalanche energy, repetitive tAR limited by Tjma...400V
pF
V DD=380V, V GS=0/10V, ID=11.6A, R G=6.8
-
ns
Gate Charge Characteristics Gat... |
| Description |
for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
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| File Size |
252.15K /
11 Page |
 View
it Online |
Download Datasheet
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPD04N50C3
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| OCR Text |
...single pulse I D = 3.4 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 4.5 A, VDD = 50 V Avalanche current, repe...400V, ID=4.5A, V GS=0 to 10V V DD=400V, ID=4.5A
SPD04N50C3
Symbol g fs Ciss Coss Crss
Condi... |
| Description |
for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
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| File Size |
257.64K /
11 Page |
View
it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPD03N50C3
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| OCR Text |
...single pulse I D = 2.4 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 3.2 A, VDD = 50 V Avalanche current, repe...400V, ID=3.2A, V GS=0 to 10V V DD=400V, ID=3.2A
SPD03N50C3
Symbol g fs Ciss Coss Crss
Condi... |
| Description |
for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
Cool MOS& Power Transistor
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| File Size |
259.54K /
11 Page |
View
it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPD02N50C3
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| OCR Text |
...ngle pulse
I D = 1.35 A, VDD = 50 V
I D puls EAS
5.4 50 0.07 1.8 20
30
mJ
Avalanche energy, repetitive tAR limited by Tjmax1) ...400V
pF
td(on) tr td(off) tf
V DD=350V, V GS=0/10V, ID=1.8A, RG=25
-
ns
Gate Charg... |
| Description |
for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
Cool MOS& Power Transistor
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| File Size |
264.79K /
11 Page |
View
it Online |
Download Datasheet |
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意法半导
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STP21NM50N STB21NM50N STB21NM50N-1 STF21NM50N STW21NM50N
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| OCR Text |
...ting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 9 480 Unit A mJ
2/16
STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
...400V, Id=25A, Vgs=10V VDS = Max Rating VDS = Max Rating TC = 125 C VGS = 20V VDS = VGS, ID = 250 A ... |
| Description |
N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
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| File Size |
392.19K /
16 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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