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  5 10-g-762 Datasheet PDF File

For 5 10-g-762 Found Datasheets File :: 1350    Search Time::2.625ms    
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    HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723

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FAIRCHILD[Fairchild Semiconductor]
INTERSIL[Intersil Corporation]
Fairchild Semiconductor Corporation
Part No. HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723
OCR Text ...0, L = 45H IC = IC110 , VCE = 0.5 BVCES TC = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 10 L = 100H VCE = 480V VCE = 600V TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 3.0 100 30 TYP 1.8 2.1 5.0 8.0 80 105 25 20 220 140 475 1050 M...
Description 40A/ 600V/ UFS Series N-Channel IGBTs
40A, 600V, UFS Series N-Channel IGBTs
From old datasheet system
XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN
40 A, 600 V, N-CHANNEL IGBT

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    HGT1S20N60C3R HGT1S20N60C3RS HGTG20N60C3R HGTP20N60C3R

FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S20N60C3R HGT1S20N60C3RS HGTG20N60C3R HGTP20N60C3R
OCR Text ...997 File Number 4226.1 5-3 HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS Absolute Maximum Ratings TC = 25oC, Unles...10 UNITS V A A A V V W W/oC mJ oC oC s Collector-Emitter Voltage . . . . . . . . . . . . . . . . ...
Description 40A/ 600V/ Rugged UFS Series N-Channel IGBTs
40A, 600V, Rugged UFS Series N-Channel IGBTs

File Size 107.60K  /  6 Page

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    HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A
OCR Text ... VCE = 600V 120 20 TYP 28 1.4 1.5 4.8 8.4 91 122 28 24 151 55 295 500 500 MAX 250 5.0 1.8 1.9 6.3 250 110 145 32 28 210 98 320 550 700 UNITS...10, VGE = 15V, L = 100H Gate to Emitter Plateau Voltage On-State Gate Charge VGEP QG(ON) td(ON...
Description 45 A, 600 V, UFS N-Channel IGBT
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 45 A, 600 V, N-CHANNEL IGBT, TO-263AB
45A, 600V, UFS Series N-Channel IGBT 5A00V的,的ufs系列N沟道IGBT

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    HGT4E20N60A4DS HGTG20N60A4D HGTG20N60A4

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGT4E20N60A4DS HGTG20N60A4D HGTG20N60A4
OCR Text ... TJ = 25oC TJ = 125oC MIN 600 4.5 100 IGBT and Diode at TJ = 125oC, ICE = 20A, VCE = 390V, VGE = 15V, RG = 3, L = 500H, Test Circuit Figure ...10 8 6 4 2 0 400 350 300 250 200 150 100 15 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) 100 fMAX2 = (P...
Description CONNECTOR ACCESSORY 70 A, 600 V, N-CHANNEL IGBT, TO-268AA
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 162.96K  /  9 Page

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    HGTG20N60A4 HGTP20N60A4

FAIRCHILD[Fairchild Semiconductor]
Part No. HGTG20N60A4 HGTP20N60A4
OCR Text ... = 25oC TJ = 125oC MIN 600 15 4.5 100 TYP 1.8 1.6 5.5 8.6 142 182 15 12 73 32 105 280 150 MAX 250 2.0 2.7 2.0 7.0 250 162 210 350 200 UNITS ...10 8 6 4 2 0 400 350 300 250 200 150 100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) 100 fMAX2 = (PD -...
Description 600V, SMPS Series N-Channel IGBTs

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    HGTG20N60B3D G20N60B3 G20N60B3D

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. HGTG20N60B3D G20N60B3 G20N60B3D
OCR Text ...10, L = 45H IC = IC110, VCE = 0.5 BVCES TC = 150oC, ICE = IC110 VCE = 0.8 BVCES, VGE = 15V RG = 10, L = 100H IEC = 20A IEC = 20A, dIEC/dt = 100A/s IEC = 1A, dIEC/dt = 100A/s IGBT Diode VCE = 480V VCE = 600V TC = 25oC TC = 150oC TC = 25oC TC...
Description 40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
3.3V 36-mc CPLD

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    HGTG20N60C3D

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTG20N60C3D
OCR Text ...80V VCE = 600V 120 20 TYP 1.4 1.5 4.8 8.4 91 122 28 24 151 55 500 500 MAX 250 5.0 1.8 1.9 6.3 250 110 145 32 28 210 98 550 700 UNITS V A mA ...10, VGE = 15V, L = 100H Gate to Emitter Plateau Voltage On-State Gate Charge VGEP QG(ON) IC...
Description 3.3V 36-mc CPLD
45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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    SPW20N60C2

INFINEON[Infineon Technologies AG]
Part No. SPW20N60C2
OCR Text ...S V(BR)DS VGS(th) IDSS 600 3.5 700 4.5 5.5 V Drain-source avalanche breakdown voltage VGS =0V, ID =20A Gate threshold vol...10-07 Final data Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter ...
Description for lowest Conduction Losses & fastest Switching
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
Cool MOS?/a> Power Transistor

File Size 121.48K  /  11 Page

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    SPW20N60S5

INFINEON[Infineon Technologies AG]
http://
Part No. SPW20N60S5
OCR Text ...C, Tj=150C Values typ. 700 4.5 0.5 0.16 0.43 12 max. 5.5 600 3.5 - Unit V V(BR)DS VGS=0V, ID=20A A 5 250 100 0.19 nA Gate-so...10 2 W 200 180 A 10 1 Ptot 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 10 -1 10 ...
Description for lowest Conduction Losses
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
Cool MOS?/a> Power Transistor

File Size 250.78K  /  11 Page

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    HGT1S7N60A4DS HGTG7N60A4D HGTP7N60A4D

FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S7N60A4DS HGTG7N60A4D HGTP7N60A4D
OCR Text ... TJ = 25oC TJ = 125oC MIN 600 4.5 35 VGE = 15V VGE = 20V IGBT and Diode at TJ = 125oC, ICE = 7A, VCE = 390V, VGE = 15V, RG = 25, L = 1mH, Te...10 7 130 75 50 200 125 MAX 250 2 2.7 2.2 7 250 45 60 150 75 150 85 215 170 UNITS V A mA V V V nA A V...
Description 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600 V, SMPS N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 140.21K  /  9 Page

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