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  4mx4 Datasheet PDF File

For 4mx4 Found Datasheets File :: 149    Search Time::1.578ms    
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    HYB3116400BJ-60 HYB3116400BJ-50 HYB3117400BJ-50 HYB3117400BJ-60 HYB3116400BJ-70 HYB3117400BJ-70 HYB3117400BT-60 HYB31164

SIEMENS AG
Infineon Technologies AG
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Part No. HYB3116400BJ-60 HYB3116400BJ-50 HYB3117400BJ-50 HYB3117400BJ-60 HYB3116400BJ-70 HYB3117400BJ-70 HYB3117400BT-60 HYB3116400BT-60 HYB3116400BTL-70 HYB3116400BT-70 HYB3116400BT-50
OCR Text ...(7)400bj/bt(l) -50/-60/-70 3.3v 4mx4-dram the hyb 3116(7)400bj/bt is a 16mbit dynamic ram organized as 4194304 words by 4-bits. the hyb 3116(7)400bj/bt utilizes a submicron cmos silicon gate process technology, as well as advanced circuit t...
Description 3.3V 4M x 4-Bit Dynamic RAM 4M X 4 FAST PAGE DRAM, 50 ns, PDSO26
4M X 4 FAST PAGE DRAM, 70 ns, PDSO24 0.300 INCH, PLASTIC, TSOP2-26/24
4M X 4 FAST PAGE DRAM, 70 ns, PDSO24 0.300 INCH, PLASTIC, SOJ-26/24

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    Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB3117405BTL-70 HYB3117405BTL-60 HYB3117405BTL-50 HYB3117405BT-70 HYB3117405BT-60 HYB3117405BT-50 HYB3117405BJ-70 HYB3117405BJ-60 HYB3117405BJ-50 HYB3116405BTL-70 HYB3116405BTL-60 HYB3116405BTL-50 HYB3116405BT-70 HYB3116405BT-60 HYB3116405BT-50 HYB3116405BJ-70 HYB3116405BJ-60 HYB3116405BJ-50 Q67100-Q1144 Q67100-Q1143 Q67100-Q1186 HYB3116405BJBTL-50- Q67100-Q1119 Q67100-Q1120 Q67100-Q1127 Q67100-Q1128 Q67100-Q1135 Q67100-Q1136 Q67100-Q1184 HYB3116405BJBTL-50
OCR Text ...(7)405BJ/BT(L) -50/-60/-70 3.3V 4mx4-DRAM The HYB 3116(7)405BJ/BT(L) is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The HYB 3116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate process technology, as well as advanced ...
Description -3.3V 4M x 4-Bit EDO-Dynamic RAM

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SIEMENS A G
SIEMENS AG
Part No. Q67100-Q1135 Q67100-Q1136 Q67100-Q1143 Q67100-Q1127 Q67100-Q1184 Q67100-Q1144 HYB3117405BJ-70 HYB3116405BT-50 HYB3116405BTL-70 Q67100-Q1128 SIEMENSAG-Q67100-Q1184 HYB3117405BT-70 HYB3117405BJ-60 HYB3116405BT-60
OCR Text ...(7)405bj/bt(l) -50/-60/-70 3.3v 4mx4-dram the hyb 3116(7)405bj/bt(l) is a 16mbit dynamic ram organized as 4194304 words by 4-bits. the hyb 3116(7)405bj/bt(l) utilizes a submicron cmos silicon gate process technology, as well as advanced cir...
Description 3.3V 4M x 4-Bit EDO-Dynamic RAM 3.3 4米4位江户动态随机存储器
High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 4M X 4 EDO DRAM, 70 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 50 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 70 ns, PDSO24

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    KMM5364003CK KMM5364103CK

Samsung Semiconductor
Part No. KMM5364003CK KMM5364103CK
OCR Text 4mx4 & 16M Quad CAS base) Revision 0.1 Nov. 1997 DRAM MODULE Revision History Version 0.1 (Nov. 1997) * Changed the mode of parity check component from EDO to FP, refer to KMM5364003CK/CKG KMM5364103CK/CKG PACKAGE DIMENSIONS ...
Description (KMM5364103CK / KMM5364003CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas

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    Microsemi, Corp.
Part No. HY57V654020BLTC-8 HY57V654020BTC-75 HY57V654020BTC-8 HY57V654020BLTC-6 HY57V654020BTC-10 HY57V654020BTC-6 HY57V654020BTC-10S HY57V654020BLTC-10S
OCR Text ...w counter CLK Row active 4mx4 Bank3 Row Pre Decoders 4mx4 Bank 2 X decoders 4mx4 Bank 1 X decoders 4mx4 Bank 0 X decoders Sense AMP & I/O Gate CKE CS State Machine RAS CAS WE DQM X decoders I/O Buffer & Logic refresh Col...
Description x4 SDRAM
16Mx4|3.3V|4K|H|SDR SDRAM - 64M 16Mx4 | 3.3 | 4K的|魔| SDRAM的特别提款权- 64

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    HYB3117400BJ-50 HYB3117400BJ-60 HYB3117400BJ-70 HYB3117400BT-50 HYB3117400BT-60 HYB3117400BT-70 HYB3116400BTL-70 HYB3116

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB3117400BJ-50 HYB3117400BJ-60 HYB3117400BJ-70 HYB3117400BT-50 HYB3117400BT-60 HYB3117400BT-70 HYB3116400BTL-70 HYB3116400BTL-60 HYB3116400BTL-50 HYB3116400BT-70 HYB3116400BT-60 HYB3116400BT-50 HYB3116400BJ-70 HYB3116400BJ-60 HYB3116400BJ-50 HYB316400B HYB3117400BTL-70 HYB3117400BTL-60 HYB3117400BTL-50 HYB3116400BJBTL-50- HYB316400BTL-50 HYB3116400BJBTL-50
OCR Text ...(7)400BJ/BT(L) -50/-60/-70 3.3V 4mx4-DRAM The HYB 3116(7)400BJ/BT is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The HYB 3116(7)400BJ/BT utilizes a submicron CMOS silicon gate process technology, as well as advanced circui...
Description 4M x 4 Bit FPM DRAM 3.3 V 4k 50 ns
4M x 4 Bit FPM DRAM 3.3 V 4k 60 ns
-3.3V 4M x 4-Bit Dynamic RAM

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    HY57V64420HG HY57V64420HGLT-H HY57V64420HGLT-K HY57V64420HGLT-P HY57V64420HGLT-S HY57V64420HGT-H HY57V64420HGT-K HY57V64

http://
Hynix Semiconductor
Part No. HY57V64420HG HY57V64420HGLT-H HY57V64420HGLT-K HY57V64420HGLT-P HY57V64420HGLT-S HY57V64420HGT-H HY57V64420HGT-K HY57V64420HGT-P HY57V64420HGT-S HY57V64420HGT-6 HY57V64420HGT-7
OCR Text ...w counter CLK Row active 4mx4 Bank3 Row Pre Decoders 4mx4 Bank 2 X decoders 4mx4 Bank 1 X decoders 4mx4 Bank 0 X decoders Sense AMP & I/O Gate CKE CS State Machine RAS CAS WE DQM X decoders I/O Buffer & Logic refresh Col...
Description 4 Banks x 4M x 4Bit Synchronous DRAM
x4 SDRAM

File Size 137.42K  /  11 Page

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For 4mx4 Found Datasheets File :: 149    Search Time::1.578ms    
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