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Bourns, Inc.
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Part No. |
CE02-2A18-10PYS
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OCR Text |
... a a current capacity 13a (29.4a) 23a (62.5a) 13a (43.6a) 23a (83.7a) 13a (81.7a) insert no. 22-14 22-22 22-23 24-10 (d) 24-10 (g) arrangements contact size #16 #8 #12 #8 #8 no. of contacts 19 4 8 7 7 grounding contact position n termina... |
Description |
MIL SERIES CONNECTOR, RECEPTACLE
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File Size |
310.24K /
8 Page |
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INTERSIL[Intersil Corporation]
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Part No. |
BUZ42
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OCR Text |
4a, 500v, 2.000 Ohm, N-Channel Power MOSFET
Features
* 4a, 500v
[ /Title This is an N-Channel enhancement mode silicon gate power * rDS(ON) = 2.000 (BUZ42 field effect transistor designed for applications such as * SOA is Power Dissi... |
Description |
4a/ 500v/ 2.000 Ohm/ N-Channel Power MOSFET 4a, 500v, 2.000 Ohm, N-Channel Power MOSFET
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File Size |
41.11K /
5 Page |
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Microsemi, Corp.
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Part No. |
APT1001R6SLL
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OCR Text |
... 2 (v gs = 10v, i d = 4a) zero gate voltage drain current (v ds = 800v, v gs = 0v) zero gate voltage drain current (v ds = 500v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold v... |
Description |
8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-2
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File Size |
67.58K /
4 Page |
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Advanced Power Technology, Ltd. Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
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Part No. |
APT1003RSLL APT1003RBLL
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OCR Text |
4a 3.00
R
MOSFET
TO-247
D3PAK
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFE...500v ID = 4a @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500v ID = 4a @ 25C RG = 1.6 6 INDUCTIVE SWITC... |
Description |
POWER MOS 7 MOSFET MOSFET的功率MOS 7
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File Size |
99.14K /
5 Page |
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it Online |
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Price and Availability
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