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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FS25SM-10a
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| OCR Text |
...
VDS = 100V 200V
32
12
400v
24
125C
8
16
4
TCh = 25C ID = 25A
8
0
0
80
160
240
320
400
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
D... |
| Description |
Power MOSFETs: FL Series
HIGH-SPEED SWITCHING USE
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| File Size |
72.64K /
4 Page |
 View
it Online |
Download Datasheet
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
FL14KM-10a
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| OCR Text |
...
200V
40
TC = 125C
12
400v
30
75C
8
20
25C VGS = 0V Pulse Test
4
10
0
0
20
40
60
80
100
120
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE V... |
| Description |
Power MOSFETs: FL Series
HIGH-SPEED SWITCHING USE Nch POWER MOSFET
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| File Size |
62.19K /
4 Page |
View
it Online |
Download Datasheet |
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|
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Infineon Technologies A...
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| Part No. |
IGB30N60T
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| OCR Text |
... 220 V s W C
VGE = 15V, VCC 400v, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering tempe...10a 0A 100H z
T C =80C T C =110C
IC, COLLECTOR CURRENT
70A
10a 50s
1A DC
1ms 10ms
... |
| Description |
Low Loss IGBT in TrenchStop and Fieldstop technology
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| File Size |
354.83K /
12 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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