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DYNEX[Dynex Semiconductor]
Dynex Semiconductor Ltd.
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| Part No. |
DFM1200EXM12-A000
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| OCR Text |
...Tj = 125C
2000 1600 1200 800 400 0 0 0.5 1 2.5 Forward voltage, VF - (V) 1.5 2 3 3.5
1
Diode 0.1 0.001
Ri (C/KW) i (ms) 0.01
...600 400
1000
200 0 0
0 0
20
40 60 80 100 120 Case temperature, Tcase - (C)
140
... |
| Description |
Fast Recovery Diode Module Preliminary Information
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| File Size |
119.16K /
7 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier]
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| Part No. |
GB75YF120N
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| OCR Text |
...7209 01/06
160 140
500
400
120 100
80 60 40 20 0 0 20 40 60 80 100 120
PD (W)
IC (A)
300
200
100
0 0 20 40 60...600 800 1000 1200
2.5 2 0 0.2 0.4 0.6 0.8 1
VCES (V) Fig. 11 - Typ Zero Gate Voltage Collector... |
| Description |
IGBT FOUR PAK MODULE
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| File Size |
184.69K /
9 Page |
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it Online |
Download Datasheet |
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Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
GP1600FSS12
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| OCR Text |
... dIF/dt = 2000A/s -
1900 250 400 1750 500 250 250
225
2100 300 500 2000 550 350 350
-
ns ns mJ ns ns mJ C
C
Caution: This dev...600 800 1000 1200 Collector current, IC - (A) 1400 1600 A : Rg = 7 B : Rg = 4.7 C : Rg = 3.3
B C
... |
| Description |
Powerline N-Channel Single Switch IGBT Module Advance Information 2100 A, 1200 V, N-CHANNEL IGBT
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| File Size |
87.68K /
11 Page |
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it Online |
Download Datasheet |
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DYNEX[Dynex Semiconductor]
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| Part No. |
GP2400ESM12
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| OCR Text |
...) = 3.3 L ~ 80nH Min. Typ. 2570 400 980 2650 1000 620 400 Max. Units ns ns mJ ns ns mJ C Test Conditions IC = 2400A VGE = 15V VCE = 600V RG(...600 0 0
3000 2400 1800 1200 600 0 0
1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V)
5.... |
| Description |
Powerline N-Channel Single Switch IGBT Module Preliminary Information
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| File Size |
169.18K /
12 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRG4PSH71UD
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| OCR Text |
...
Cres
4
0 0 100 200 300 400
VCE, Collector-to-Emitter Voltage (V)
QG, Total Gate Charge (nC)
Fig. 7 - Typical Capacitance v...600 700 800 900 1000
20
VR = 200V TJ = 125C TJ = 25C
0 100 200 300 400 500 600 700 800 900 ... |
| Description |
99 A, 1200 V, N-CHANNEL IGBT, TO-274AA
INSULATED GATE BIPOLAR TRANSISTOR WITH
1200v UltraFast 4-20 kHz CoPack IGBT in a TO-274AA package
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| File Size |
322.70K /
10 Page |
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it Online |
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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
ISL9K8120P3
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| OCR Text |
...1
25oC
0.01 200
300
400
500
600
700
800
900 1000 1100 1200
VF, FORWARD VOLTAGE (V)
VR , REVERSE VOLTAGE (V)
Figure 1. Forward Current vs Forward Voltage
500 450 400 t, RECOVERY TIMES (ns) VR = 780V, TC =... |
| Description |
8A, 1200v StealthDual Diode 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AB
8A, 1200v Stealth Dual Diode
8A, 1200v Stealth⑩ Dual Diode
8A, 1200v Stealth?/a> Dual Diode
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| File Size |
110.57K /
6 Page |
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it Online |
Download Datasheet |
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