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4-gf-762 Datasheet PDF File

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					Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF0910A 0910A
OCR Text	...Hz 2 3 2-R1.25 14.3 9.4 APPLICATION UHF band power amplifiers QUALITY GRADE * IG 10.0 RECOMMENDED BIAS CONDITIONS * V...GF-21 3 DRAIN ABSOLUTE MAXIMUM RATINGS (Ta=25C) Symbol VGDO VGSO ID IGR IGF PT Tch Tstg *1:T...
Description	MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L S BAND POWER GaAs FET From old datasheet system
File Size	25.38K / 3 Page	View it Online	Download Datasheet

					MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF0910A_1 MGF0910A MGF0910A1
OCR Text	...Hz 2 3 2-R1.25 14.3 9.4 APPLICATION UHF band power amplifiers QUALITY GRADE * IG 10.0 RECOMMENDED BIAS CONDITIONS * V...GF-21 3 DRAIN ABSOLUTE MAXIMUM RATINGS (Ta=25C) Symbol VGDO VGSO ID IGR IGF PT Tch Tstg *1:T...
Description	L, S BAND POWER GaAs FET
File Size	176.99K / 4 Page	View it Online	Download Datasheet

					Mitsubishi Electric Semiconductor
Part No.	MGF0805A
OCR Text	...0 Unit V V A W mA mA C C 4.0 mm Package Outline (GF-50 Style) Electrical characteristics ( Ta = 25 C) Symbol IDSS VGS(off) gm Po add GLP Rth(ch-c) Parameter Saturated drain current Gate to source cut-off voltage Transcon...
Description	L & S Band GaAs FET [ SMD non-matched ]
File Size	113.02K / 8 Page	View it Online	Download Datasheet

					Freescale Semiconductor, Inc
Part No.	MRF6V14300HR3 MRF6V14300HSR3
OCR Text	...(Minimum) IV (Minimum) Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Off Characteristics Gate- So...GF Drp H2 & H3 -- -- -- -- -- 10 0.5 0.3 - 20 - 65 -- -- -- -- -- dB dB dBc dBc All Spurs Below ...
Description	RF Power Field Effect Transistors
File Size	398.32K / 10 Page	View it Online	Download Datasheet

					Freescale Semiconductor, Inc
Part No.	MRF6V14300HSR3 MRF6V14300HR3
OCR Text	4/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications ...GF Drp H2 & H3 -- -- -- -- -- 10 0.5 0.3 --20 --65 -- -- -- -- -- dB dB dBc dBc All Spurs Below ...
Description	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
File Size	633.54K / 10 Page	View it Online	Download Datasheet

					Mitsubishi Electric Semiconductor
Part No.	MGF0913A MGF0913A11
OCR Text	... i gf forward gate current 5.4 ma p t total power dissipation 5.0 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions...
Description	High-power GaAs FET (small signal gain stage)
File Size	106.86K / 4 Page	View it Online	Download Datasheet

					Lite-On Technology Corporation
Part No.	MB140
OCR Text	...J =100 0.1 0.6 0.01 0.4 0.2 RESISTIVE OR INDUCTIVE LOAD 0.001 TJ =25 0 25 50 75 100 125 150 0.0001 0 5 10 15 20 25 30 35 40 45 TL , LEAD TEMPERATURE () Fig.3 - Maxmun Non-Repetitive Peak Forward Surge Current ...
Description	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
File Size	33.58K / 2 Page	View it Online	Download Datasheet

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