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  32us Datasheet PDF File

For 32us Found Datasheets File :: 29    Search Time::1.391ms    
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    Microsemi, Corp.
Part No. TCS1200
OCR Text ...at 50v as well as the standard 32us,2% data at 53v microsemi reserves the right to change, without notice, th e specifications and information contained herein. visit our web site at www.microsemi.com or contact our fa...
Description 1200 Watts, 53 Volts Pulsed Avionics at 1030 MHz L BAND, Si, NPN, RF POWER TRANSISTOR

File Size 96.92K  /  4 Page

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    MICROSEMI[Microsemi Corporation]
Part No. MDS500L
OCR Text ... MDS500L Pout and Nc vs Pin (32us; 2%) 700 600 500 400 300 200 100 0 0 20 40 Pin(W) Pout Efficiency 60 80 70 60 50 40 30 20 10 0 100 Pout and Nc vs Pin (32us burst,N=48) 700 600 500 70 60 50 40 30 20 10 0 10 20 30 40 50...
Description high power COMMON BASE bipolar transistor.null

File Size 261.68K  /  4 Page

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    KA7307D

Samsung semiconductor
Part No. KA7307D
OCR Text ...UT ( IRIS OUT AGC OUT ) 16us 32us 16us 32us VID-97-D002 February 1997 5 Preliminary KA7307D CHARACTERISTICS GRAPH CDS/AGC ( Standard Control Characteristics ; ( Vcc = 5.0 V , Ta = 25C ) Input Control Voltage : 0 ~ 5...
Description GENERAL DESCRIPTION

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    MDS140L

Microsemi Corporation
Part No. MDS140L
OCR Text ...CC = 50V Pin = 15.7W ELM Burst: 32us(On), 18us(Off), N=48, Period=23ms MIN 140 TYP MAX 15.7 UNITS W W dB % dB ns - 9.5 50 0.5 100 2:1 1. At rated output power, pulse conditions and MSC fixture 2. ELM Burst Pulse: 32us(On),...
Description 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz

File Size 198.76K  /  5 Page

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    BU2525AF

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2525AF
OCR Text ...25 C IB IBend t 10us 13us 32us 10 1V VCE 1 t 0.1 1 IC / A 10 100 Fig.3. Switching times waveforms. Fig.6. Typical DC current gain. hFE = f (IC) parameter VCE September 1997 3 Rev 1.400 Philips S...
Description Silicon Diffused Power Transistor

File Size 70.77K  /  7 Page

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    BU2525AW

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2525AW
OCR Text ... IB IBend 10 t 10us 13us 32us VCE 1V 1 0.1 t 1 IC / A 10 100 Fig.3. Switching times waveforms. Fig.6. Typical DC current gain. hFE = f (IC) parameter VCE VBESAT / V Tj = 25 C Tj = 125 C ICsat 90 % IC 1.2...
Description Silicon Diffused Power Transistor

File Size 74.93K  /  7 Page

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    BU2525AX

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2525AX
OCR Text ...25 C IB IBend t 10us 13us 32us 10 1V VCE 1 t 0.1 1 IC / A 10 100 Fig.3. Switching times waveforms. Fig.6. Typical DC current gain. hFE = f (IC) parameter VCE September 1997 3 Rev 2.200 Philips S...
Description Silicon Diffused Power Transistor

File Size 72.99K  /  7 Page

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    BU2525A

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2525A
OCR Text ... IB IBend 10 t 10us 13us 32us VCE 1V 1 0.1 t 1 IC / A 10 100 Fig.3. Switching times waveforms. Fig.6. Typical DC current gain. hFE = f (IC) parameter VCE VBESAT / V Tj = 25 C Tj = 125 C ICM 90 % IC 1.2 1...
Description Silicon Diffused Power Transistor

File Size 51.22K  /  7 Page

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    BU2525DF BU2508DF

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2525DF BU2508DF
OCR Text ... D.U.T. IBend LB Cfb Rbe 32us VCE -VBB t Fig.1. Switching times waveforms. Fig.4. Switching times test circuit. ICsat 90 % IC 100 hFE BU2525DF Tj = 25 C Tj = 125 C 5V 10 % tf ts IB IBend t 10 1V t ...
Description Silicon Diffused Power Transistor

File Size 71.42K  /  7 Page

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    BU2525DW

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2525DW
OCR Text ... IC IB IBend t 10us 13us 32us ts IB IBend tf 10 % t VCE t t - IBM Fig.1. Switching times waveforms. Fig.2. Switching times definitions. 2 Measured with half sine-wave voltage (curve tracer). September 1...
Description Silicon Diffused Power Transistor

File Size 74.81K  /  7 Page

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For 32us Found Datasheets File :: 29    Search Time::1.391ms    
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