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  30-300s Datasheet PDF File

For 30-300s Found Datasheets File :: 9190    Search Time::3.328ms    
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    2SB772 B772 UTC2SB772

友顺科技股份有限公司
UTC[Unisonic Technologies]
Part No. 2SB772 B772 UTC2SB772
OCR Text ...Ic Ic IB Tj TSTG VALUE -40 -30 -5 10 1 -3 -7 -0.6 150 -55 ~ +150 UNIT V V V W W A A A C C ELECTRICAL CHARACTERISTICS(Ta=25C,unles...300s,Duty Cycle<2% 30 100 200 150 -0.3 -1.0 80 45 400 -0.5 -2.0 V V MHz pF UTC UNI...
Description MEDIUM POWER LOW VOLTAGE TRANSISTOR
PNP EPITAXIAL SILICON TRANSISTOR

File Size 45.29K  /  2 Page

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    2SD1022

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1022
OCR Text ...ansistor DissipationTc = 25*Z P 30 W T Mounting Torque : 0.3Nm*j TOR (Recommended torque0.5 Nm *oeElectrical Characteristics (Tc=25*Z) Item ...300s 1 8 0C -25C 100 -55C 0.1 Collector Current IC [A] 2SD1022 Saturation Volt...
Description Darlington Transistor(5A NPN)

File Size 273.90K  /  8 Page

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    2SD1023

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1023
OCR Text ...ansistor DissipationTc = 25*Z P 30 W T Mounting Torque TOR (Recommended torque : 0.3Nm*j 0.5 Nm *oeElectrical Characteristics (Tc=25*Z) Item...300s 10000 50C 100C Tc = 150C DC Current Gain hFE 1000 25C 0C -25C -55...
Description Darlington Transistor(5A NPN)

File Size 290.46K  /  9 Page

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    2SD1024

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1024
OCR Text ...V, I = 5A Min 1,500 FE CE C Max 30,000 Collector to Emitter Saturation 5A V (sat) I = Voltage Max 1.5V CE C Base to Emitter Saturation Volta...300s 1 10 12 0C -25C -55C 100 0.1 Collector Current IC [A] 2SD1024 Saturation ...
Description Darlington Transistor(8A NPN)

File Size 275.54K  /  8 Page

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    2SD1025

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1025
OCR Text ...V, I = 5A Min 1,500 FE CE C Max 30,000 Collector to Emitter Saturation 5A V (sat) I = Voltage Max 1.5V CE C Base to Emitter Saturation Volta...300s 10000 50C 100C Tc = 150C DC Current Gain hFE 1000 25C 0C -25C 1 10 12 ...
Description Darlington Transistor(8A NPN)

File Size 343.47K  /  8 Page

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    2SD882S UTC2SD882S

Unisonic Technologies
Part No. 2SD882S UTC2SD882S
OCR Text ... Ic Ic IB Tj TSTG RATING 40 30 5 0.5 3 7 0.6 150 -55 ~ +150 UNIT V V V W A A A C C ELECTRICAL CHARACTERISTICS (Ta=25C,unless othe...300s,Duty Cycle<2% 30 100 200 150 0.3 1.0 80 45 400 0.5 2.0 V V MHz pF CLASSIFICATION...
Description NPN EPITAXIAL SILICON TRANSISTOR

File Size 73.22K  /  2 Page

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    BAT54C-T1 BAT54C-T3 BAT54S-T1 BAT54S-T3 BAT54A-T1 BAT54A-T3 BAT54-T1 BAT54-T3 BAT54

Won-Top Electronics Co., Ltd.
Part No. BAT54C-T1 BAT54C-T3 BAT54S-T1 BAT54S-T3 BAT54A-T1 BAT54A-T3 BAT54-T1 BAT54-T3 BAT54
OCR Text ...e specified Value Unit 30 V 100 200 300 600 200 500 -65 to +125 mA mA mA mA mW K/W C BAT54/A/C/S 1 of 3 (c) 2002 ...300s, duty cycle <2% @IF = 0.1mA @IF = 1mA @IF = 10mA @IF = 30mA @IF = 100mA tp < 300s, duty cycle <...
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE 表面贴装肖特基势垒二极管

File Size 35.30K  /  3 Page

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    BAT54CW-T1 BAT54CW-T3 BAT54SW-T1 BAT54SW-T3 BAT54AW-T1 BAT54AW-T3 BAT54W-T1 BAT54W-T3 BAT54W

Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
Part No. BAT54CW-T1 BAT54CW-T3 BAT54SW-T1 BAT54SW-T3 BAT54AW-T1 BAT54AW-T3 BAT54W-T1 BAT54W-T3 BAT54W
OCR Text ...E G H J K L M SOT-323 Min Max 0.30 0.40 1.15 1.35 2.00 2.20 0.65 Nominal 0.30 0.40 1.20 1.40 1.80 2.20 -- 0.10 0.90 1.10 0.25 -- 0.05 0.15 ...300s, duty cycle < 2% @ IF = 0.1mA @ IF = 1mA @ IF = 10mA @ IF = 30mA @ IF = 100mA tp < 300s, duty c...
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE 表面贴装肖特基势垒二极管

File Size 36.12K  /  3 Page

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    BCM846S

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BCM846S
OCR Text ... Unit 140 K/W 1 Aug-30-2002 BCM846S Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Valu...300s; D < 2% 2 Matching -10 -10 10 10 Aug-30-2002 BCM846S Electrical Characte...
Description NPN Silicon AF Transistor Array

File Size 183.86K  /  7 Page

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    FDS6680S

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS6680S
OCR Text ...y diode. Features * 11.5 A, 30 V. RDS(ON) = 0.011 @ VGS = 10 V RDS(ON) = 0.016 @ VGS = 4.5 V * * * Includes SyncFET Schottky bod...300s, Duty Cycle < 2.0% 3. See "SyncFET Schottky body diode characteristics" below. FDS6680S Rev A ...
Description 30V N-Channel PowerTrench SyncFET⑩

File Size 220.76K  /  9 Page

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