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  20v us Datasheet PDF File

For 20v us Found Datasheets File :: 4130    Search Time::2.218ms    
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    Para Light Electronics
Part No. L-51ROPT1D1
OCR Text ... 2 i e =100 ua ee=0mw/cm 2 v e =20v ee=0mw/cm 2 i c =2ma ee=0.5mw/cm 2 v ce =5v i c =1ma rl=1000 f= 1mhz v cb =3v ee=0mw/cm 2 parameter coll...us) l c (ma) (nm) min typ max test condition parameter l-32ropt1d1 30 5 100 0.4 15/15 0.2 0.6 900 94...
Description Receiver Module

File Size 1,159.51K  /  14 Page

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    INFINEON[Infineon Technologies AG]
Part No. Q67040-S4655 IKA03N120H2 Q67040-S4649
OCR Text ... C E = 0V ,V G E = 2 0V V C E = 20v, I C = 3A 2 20 80 100 nA S 2.1 1.55 1.6 3 3.9 A 2.2 2.5 2.4 2.8 1200 V Symbol Conditions Value min. Typ....us IC=3A, TJ=25C 0.1mJ 25C 80C 125C 150C 1000V/us 2000V/us 3000V/us Tj...
Description IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT FullPak
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
High Speed CMOS Logic Hex Non-Inverting Buffers 16-TSSOP -55 to 125

File Size 332.84K  /  14 Page

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    TLP106

Toshiba Semiconductor
Part No. TLP106
OCR Text ...85C Power Supply Voltage : -0.5~20v Input Current : IFLH=3mA(Max.) Switching Time (tpLH/tpHL) : 400ns(Max.) Common mode transient immunity : 10kV/us Isolation Voltage : 3750Vrms JEDEC TOSHIBA Weight: 0.09 g 11-4C2 Truth Table Input H...
Description Intelligent Power Module Signal Isolation Industrial Inverters Moter Drive

File Size 116.41K  /  9 Page

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    MITSUMI ELECTRIC CO., LTD.
TOSHIBA[Toshiba Semiconductor]
Part No. TLP106
OCR Text ...85C Power Supply Voltage : -0.5~20v Input Current : IFLH=3mA(Max.) Switching Time (tpLH/tpHL) : 400ns(Max.) Common mode transient immunity : 10kV/us Isolation Voltage : 3750Vrms JEDEC TOSHIBA Weight: 0.09 g 11-4C2 Truth Table Input H...
Description Intelligent Power Module Signal Isolation Industrial Inverters Moter Drive 智能功率模块信号隔离工业逆变器电动机驱动
Photocouplers - Photo-IC Output

File Size 112.14K  /  8 Page

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    IKW03N120H2 Q67040-S4597 IKB03N120H2 IKP03N120H2 Q67040-S4594 Q67040-S4595 IKB03N120H2E3045A INFINEONTECHNOLOGIESAG-Q670

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. IKW03N120H2 Q67040-S4597 IKB03N120H2 IKP03N120H2 Q67040-S4594 Q67040-S4595 IKB03N120H2E3045A INFINEONTECHNOLOGIESAG-Q67040-S4594
OCR Text ... C E = 0V ,V G E = 2 0V V C E = 20v, I C = 3A 2 20 80 100 nA S 2.1 2.0 1.75 3 2.5 3.9 A 2.2 2.5 2.4 2.8 1200 V Symbol Conditions Value min. ...us IC=3A, TJ=25C 0.1mJ 25C 80C 125C 150C 1000V/us 2000V/us 3000V/us Tj...
Description IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT D2Pak
1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon™ diode in only one package.
IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT TO247
IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT TO220
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
From old datasheet system

File Size 428.03K  /  15 Page

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    IGW03N120H2NBSP IGP03N120H2NBSP IGB03N120H2NBSP IGB03N120H2 Q67040-S4599 IGP03N120H2 IGW03N120H2 Q67040-S4596 Q67040-S45

INFINEON[Infineon Technologies AG]
Part No. IGW03N120H2NBSP IGP03N120H2NBSP IGB03N120H2NBSP IGB03N120H2 Q67040-S4599 IGP03N120H2 IGW03N120H2 Q67040-S4596 Q67040-S4598 IGB03N120H2E3045A
OCR Text ... C E = 0V ,V G E = 2 0V V C E = 20v, I C = 3A 2 20 80 100 nA S 2.1 2.2 2.5 2.4 3 2.8 3.9 A 1200 V Symbol Conditions Value min. Typ. max. Uni...us IC=3A, TJ=25C 0.1mJ 25C 80C 125C 150C 1000V/us 2000V/us 3000V/us Tj...
Description High Speed CMOS Logic Hex Non-Inverting Buffers 16-SOIC -55 to 125 高 -技
From old datasheet system
HighSpeed 2-Technology
IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT TO247
IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT TO220
IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT D2Pak
1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...

File Size 393.63K  /  13 Page

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    MICROSEMI CORP-LOWELL
MICROSEMI[Microsemi Corporation]
Part No. UPF1N100
OCR Text ...to Source Leakage Current (VGS= 20v, VDS=0V, TJ = 25C ) Gate to Source Leakage Current (VGS= 20v, VDS=0V, TJ = 37C ) Gate to Source Leakag...us IS = 1 A, dIs/dt = 100 A/us MIN TYP 290 36 15 20 1.0 10 6.3 5.9 315 2.6 6.3 5.8 76 470 0.825 121 ...
Description SURFACE MOUNT N . CHANNEL MOSFET
From old datasheet system
N-Channel MOSFET
N Channel MOSFET

File Size 55.32K  /  2 Page

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    WINSON[Winson Semiconductor Corp.]
Part No. WSH41S-XPD2 WSH41S WSH41S-XPD1
OCR Text ... Features: Operate from 2.8V to 20v supply voltage. On-chip Hall sensor. Internal bandgap regulator allows temperature compensated operation...us Vcc=12V, RL=820 10 CL=20Pf Output Falling Tf us Vcc=12V, RL=820 0.3 1.5 Time CL=20Pf Output Tim...
Description Hall Effect Sensor IC with Thermal Lock Protection ,Auto Restart and Speed Control Function

File Size 204.46K  /  8 Page

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For 20v us Found Datasheets File :: 4130    Search Time::2.218ms    
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