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  100 445 030 520 Datasheet PDF File

For 100 445 030 520 Found Datasheets File :: 46    Search Time::1.141ms    
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    LCB110 LCB110S LCB110STR

Clare Inc
CLARE[Clare, Inc.]
Part No. LCB110 LCB110S LCB110STR
OCR Text ...0 0.005 0 -40 -20 0 20 40 60 80 100 Temperature (C) DC Configuration Device Count (N) 180 160 140 120 100 80 60 40 AC/DC Configu...445 .127 (.175 .005) 3.302 (.130) .635 TYP. (.025) .254 TYP. (.010) 6.350 .127 (.250 .005) 8....
Description Single Pole OptoMOS Relay

File Size 128.59K  /  6 Page

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    MRF166W

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF166W
OCR Text ...ALC and Modulation Techniques * 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR * Low Crss -- 4.5 pF @ VDS = 28 Volts * Cir...445 H RFC1 RFC2, RFC3 R1 R2 R3, R6 R4 R5 R7 T1, T2 Z1, Z2 Z3, Z4 Z5, Z6 Z7, Z9 Z8, Z10 Ferroxc...
Description TMOS BROADBAND RF POWER FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

File Size 134.64K  /  6 Page

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    UPA803 UPA803T UPA803T-T1

NEC[NEC]
Part No. UPA803 UPA803T UPA803T-T1
OCR Text ...E Value FB T73 60 to 120 GB T74 100 to 200 TYPICAL CHARACTERISTICS (TA = 25 C) PT - TA Characteristics 24 160 mW 120 mW Free Air IC - VB...445 .439 .429 .423 .417 .413 .406 .401 .397 .393 .394 .395 .396 S22 ANG -13.3 -22.8 -28.2 -31.4 -33....
Description NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

File Size 56.84K  /  8 Page

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    STB6NK60Z STB6NK60Z-1 STB6NK60ZT4 STP6NK60ZFP STP6NK60Z

STMICROELECTRONICS[STMicroelectronics]
Part No. STB6NK60Z STB6NK60Z-1 STB6NK60ZT4 STP6NK60ZFP STP6NK60Z
OCR Text ...EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIB...445 2.7 12 Test Conditions Min. Typ. Max. 6 24 1.6 Unit A A V ns C A Note: 1. Pulsed: Pulse durat...
Description N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH?Power MOSFET
N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESHPower MOSFET
N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET

File Size 576.61K  /  13 Page

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    STD5NM60-1 STP8NM60FP STD5NM60 STP8NM60

STMICROELECTRONICS[STMicroelectronics]
Part No. STD5NM60-1 STP8NM60FP STD5NM60 STP8NM60
OCR Text ...1 1 ID 8A 8 A(*) 5A 5A Pw 100 W 30 W 96 W 96 W 3 s TYPICAL RDS(on) = 0.9 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE...445 3005 13.5 Test Conditions Min. Typ. Max. 8 32 1.5 Unit A A V ns C A ns C A Note: 1. Pulsed: P...
Description N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh?/a> Power MOSFET
N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh Power MOSFET
N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh⑩ Power MOSFET

File Size 601.81K  /  13 Page

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    MRFIC1805

MOTOROLA[Motorola, Inc]
Part No. MRFIC1805
OCR Text ...F T1 C1 C4, C5, - 22 pF T1 - 100 W Line, 7 mm T2 - 100 W Line, 20 mm Board Material - 30 MIL FR4 Connectors - SMA Type RF IN Figure...445 S22 -178 178 174 170 167 163 160 158 156 154 152 149 147 146 143 141 140 138 136 135 133 MRF...
Description 1.9 GHz POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT

File Size 218.53K  /  10 Page

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    DS1688 DS1688S DS1691

DALLAS[Dallas Semiconducotr]
MAXIM - Dallas Semiconductor
Part No. DS1688 DS1688S DS1691
OCR Text ... 38.61 0.695 17.65 0.350 8.89 0.100 2.54 0.015 0.38 0.110 2.79 0.090 2.29 0.590 14.99 0.008 0.20 0.015 0.38 MAX 1.540 39.12 0.740 18.80 0.375 9.52 0.130 3.30 0.030 0.76 0.140 3.56 0.110 2.79 0.630 16.00 0.012 0.30 0.021 0.53 G IN. MM F H...
Description 3 Volt/5 Volt Serialized Real Time Clock with NV RAM Control

File Size 46.66K  /  5 Page

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    NE334S01 NE334S01-T1 NE334S01-T1B

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. NE334S01 NE334S01-T1 NE334S01-T1B
OCR Text ... 2 V, VGS = 0 V VDS = 2 V, ID = 100 mA VDS = 2 V, ID = 14 mA VDS = 2 V, ID = 15 mA, f = 4 GHz mA mA V mS -0.2 70 -0.9 85 0.25 16...445 MAG. S22 ANG. (deg.) -27.5 -35.8 -43.0 -47.9 -51.7 -56.2 -59.7 -63.3 -68.1 -73.0 -79.1 -87.5 -97...
Description C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET C波段超低噪声放大器N沟道黄建忠场效应

File Size 72.14K  /  12 Page

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    NE32584 NE32584C NE32584C-S NE32584C-T NE32584C-SL NE32584C-T1 NE32584C-T1A

NEC Corp.
NEC[NEC]
Part No. NE32584 NE32584C NE32584C-S NE32584C-T NE32584C-SL NE32584C-T1 NE32584C-T1A
OCR Text ... IG Ptot Tch Tstg 4.0 -3.0 IDSS 100 165 150 -65 to +150 V V mA 1. 2. 3. 4. Source Drain Source Gate PA mW qC qC RECOMMENDED OPE...445 .397 .356 .299 29.7 37.2 43.9 51.0 58.0 64.2 70.4 76.4 81.8 87.6 92.5 97.6 102.3 107.5 112.1 ...
Description C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

File Size 71.41K  /  12 Page

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    STP8NM60FP STP8NM60

STMicroelectronics
Part No. STP8NM60FP STP8NM60
OCR Text ...1 1 ID 8A 8 A(*) 5A 5A Pw 100 W 30 W 96 W 96 W 3 s TYPICAL RDS(on) = 0.9 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE...445 3005 13.5 Test Conditions Min. Typ. Max. 8 32 1.5 Unit A A V ns C A ns C A Note: 1. Pulsed: P...
Description N-CHANNEL 600V - 0.9 OHM - 8A TO-220/TO-220FP/DPAK/IPAK MDMESH POWER MOSFET

File Size 592.86K  /  13 Page

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