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HYNIX
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| Part No. |
HY62UF1680
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| OCR Text |
...Min) 40mA a Icc1(1us) 8mA a Isb 0.1mA a Isb1 25uA a Iccdr 12uA a Pin Connection E3 DNU a E3 NC Draft Date May.29.2001 Mar.20.2002 3mA 20mA 2...8V
1029 Ohm DOUT CL(1) 1728 Ohm
Note 1. Including jig and scope capacitance
Rev.02/Apr. 200... |
| Description |
High speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits
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| File Size |
242.14K /
11 Page |
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HYNIX
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| Part No. |
HY62SF16404E
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| OCR Text |
...Package Height Changed 1.0mm -> 0.9mm ISB1 Changed 6uA -> 10uA VOH Changed 1.6V -> 1.4V Icc Changed 0.5mA -> 1.0mA Draft Date Dec.20.2001 Ma...8V TA = 25C 2. Typical values are not 100% tested
CAPACITANCE
(Temp = 25C, f= 1.0MHz) Symbol Par... |
| Description |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
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| File Size |
156.26K /
10 Page |
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it Online |
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BSI[Brilliance Semiconductor]
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| Part No. |
BS616UV8010BI BS616UV8010 BS616UV8010BC
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| OCR Text |
...: 20mA (Max.) operating current 0.4uA (Typ.) CMOS standby current Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) op...8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed a... |
| Description |
Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
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| File Size |
205.94K /
9 Page |
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it Online |
Download Datasheet |
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BRILLIANCE SEMICONDUCTOR, Inc.
BSI[Brilliance Semiconductor]
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| Part No. |
BS616UV8020BI BS616UV8020 BS616UV8020BC
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| OCR Text |
...: 20mA (Max.) operating current 0.4uA (Typ.) CMOS standby current Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) op...8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed a... |
| Description |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开
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| File Size |
204.80K /
11 Page |
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it Online |
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BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
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| Part No. |
BS616UV8021FI BS616UV8021 BS616UV8021BC BS616UV8021BI BS616UV8021DC BS616UV8021DI BS616UV8021FC
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| OCR Text |
...: 25mA (Max.) operating current 0.6ua (Typ.) CMOS standby current * High speed access time : -70 70ns (Max.) at Vcc=2.0V -10 100ns (Max.) at...8V to 2.3V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed a... |
| Description |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 16100万8位开
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| File Size |
212.98K /
12 Page |
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it Online |
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0.8v 0.6ua Found Datasheets File :: 27 Search Time::2.078ms
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