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  0.4v ms Datasheet PDF File

For 0.4v ms Found Datasheets File :: 17467    Search Time::5.703ms    
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    2764A M27C64A-30C1TR M27C64A-30C1X M27C64A-30C6TR M27C64A-30C6X M27C64A-30F1TR M27C64A-30F1X M27C64A-30F6TR M27C64A-30F6

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
Part No. 2764A M27C64A-30C1TR M27C64A-30C1X M27C64A-30C6TR M27C64A-30C6X M27C64A-30F1TR M27C64A-30F1X M27C64A-30F6TR M27C64A-30F6X M27C64A-20C1TR M27C64A-20C1X M27C64A-20C6TR M27C64A-20C6X M27C64A-25C1TR M27C64A-25F6X M27C64A-25F6TR M27C64A-15C6X M27C64A-15F1X M27C64A-15F6X M27C64A-15C1TR M27C64A-15F6TR M27C64A-15C6TR M27C64A-15F1TR M27C64A-20F1TR M27C64A-25F1X M27C64A-25F1TR M27C64A-25C1X M27C64A-25C6TR M27C64A-25C6X M27C64A-15C1X
OCR Text ... voltage on Input or Output is -0.5V with possible undershoot to -2.0V for a period less than 20ns. Maximum DC voltage on Output is VCC +0.5...4V 0.8 to 2.0V Figure 4. AC Testing Load Circuit 1.3V 1N914 Note that Output Hi-Z is defin...
Description 64K (8K x 8) UV EPROM and OTP ROM 64K的(8K的8)紫外线EPROM和检察官办公室光

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    2SA2011 2SC5564

SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
Part No. 2SA2011 2SC5564
OCR Text ...allowable power dissipation. 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications ( ) : 2SA2011 Absolute Maximum...4V, IC=0 VCE=(-)2V, IC=(-)500mA VCE=(-)2V, IC=(-)500mA VCB=(-)10V, f=1MHz 200 (350) 380 (41)23 Condi...
Description    DC/DC Converter Applications
NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications 直流/直流转换器应

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    2SA2012 2SC5565

SANYO[Sanyo Semicon Device]
Part No. 2SA2012 2SC5565
OCR Text ...allowable power dissipation. 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications ( ) : 2SA2012 Absolute Maximum...4V, IC=0 VCE=(-)2V, IC=(-)500mA VCE=(-)10V, IC=(-)500mA VCB=(-)10V, f=1MHz 200 (350) 420 (30)20 Cond...
Description    DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications

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    2SA2013 2SC5566

SANYO[Sanyo Semicon Device]
Part No. 2SA2013 2SC5566
OCR Text ...allowable power dissipation. 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications ( ) : 2SA2013 Absolute Maximum...4V, IC=0 VCE=(-)2V, IC=(-)500mA VCE=(-)10V, IC=(-)500mA VCB=(-)10V, f=1MHz 200 (360) 400 (24)15 Cond...
Description    DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications

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    2SA2016 2SC5569

SANYO[Sanyo Semicon Device]
Part No. 2SA2016 2SC5569
OCR Text ...lowable power dissipation. 3 0.5 0.4 1.5 3.0 0.75 2 1 0.4 1.0 2.5 4.25max Specifications ( ) : 2SA2016 Absolute Maximum R...4V, IC=0 VCE=(-)2V, IC=(-)500mA VCE=(-)10V, IC=(-)500mA VCB=(-)10V, f=1MHz 200 (290) 330 (50)28 Cond...
Description    DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications 直流/直流转换器应

File Size 48.94K  /  5 Page

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    2SA2022 2SC5610

Sanyo Semiconductor Corp
SANYO[Sanyo Semicon Device]
Part No. 2SA2022 2SC5610
OCR Text ...mm 2041A [2SA2022/2SC5610] 10.0 3.2 3.5 7.2 Features * Adoption of MBIT processes. * Large current capacitance. * Low collector-to-em...4V, IC=0 VCE=(-)2V, IC=(-)1A VCE=(-)10V, IC=(-)500mA VCB=(-)10V, f=1MHz 150 (290) 330 (50)28 Conditi...
Description NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
TRANSISTOR,BJT,NPN,50V V(BR)CEO,7A I(C),TO-220ML
From old datasheet system

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    2SA2023 2SC5611

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2023 2SC5611
OCR Text ...t:mm 2165 [2SA2023/2SC5611] 8.0 1.0 4.0 1.0 1.4 3.3 3.0 Features * Low collector-to-emitter saturation voltage. * Excellent d...4V, IC=0 VCE=(-)2V, IC=(-)1A VCE=(-)5V, IC=(-)1A IC=(-)2.5A, IB=(-)0.125A 110 100 (-)0.4 Conditions ...
Description 60V / 5A High-Speed Switching Applications 0V / 5A条高速开关应
PNP/NPN Epitaxial Planar Silicon Transistors
NPN Epitaxial Planar Silicon Transistors 60V / 5A High-Speed Switching Applications
PNP Epitaxial Planar Silicon Transistors 60V / 5A High-Speed Switching Applications

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    2SB1181 2SB1260 2SB1241

ROHM[Rohm]
Part No. 2SB1181 2SB1260 2SB1241
OCR Text ...ions (Units : mm) 2SB1260 4.5+0.2 -0.1 1.60.1 2SB1181 1.50.3 6.50.2 5.1+0.2 -0.1 C0.5 2.3+0.2 -0.1 0.50.1 0.50.1 1.5 +0....4V IC/IB=-500mA/-50mA VCE=-3V, IC=-0.1A Conditions !Packaging specifications and hFE Package Cod...
Description Power Transistor

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    2SC5071

SANKEN[Sanken electric]
Part No. 2SC5071
OCR Text ...100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=-1A VCB=1...
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

File Size 23.88K  /  1 Page

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    2SD1022

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1022
OCR Text ...Peak I 8 A CP Base Current DC I 0.5 A B Base Current Peak I 1 A BP Total Transistor DissipationTc = 25*Z P 30 W T Mounting Torque : 0.3Nm*j ...4V Max 3 BB2 2SD1022 hFE - I C 10000 50C 100C Tc = 150C DC Current Gain hFE 10...
Description Darlington Transistor(5A NPN)

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For 0.4v ms Found Datasheets File :: 17467    Search Time::5.703ms    
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