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  0.13-0.40v Datasheet PDF File

For 0.13-0.40v Found Datasheets File :: 7221    Search Time::2.734ms    
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    22SC5405 2SC5405

PANASONIC[Panasonic Semiconductor]
PanasonicSemiconductor
Panasonic Corporation
Part No. 22SC5405 2SC5405
OCR Text ...5C) Ratings 80 50 6 6 3 1 20 2.0 150 -55 to +150 Unit V V V A A A W C C 15.00.5 3.20.1 13.70.2 4.20.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak col...
Description    Silicon NPN triple diffusion planar type
SiliconNPNtriplediffusionplanartype

File Size 35.55K  /  2 Page

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    2SA608 2SA608N 2SC536N

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA608 2SA608N 2SC536N
OCR Text ...current capacity and wide ASO. 0.45 3.5 1.4max 0.6 1.27 4.0max 13.7 14.0 0.5 0.45 4.5 0.44 1 2.5 2 2.5 3 ( ) : 2SA608N Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-B...
Description    Low-Frequency General-Purpose Amplifier Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications
NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications

File Size 39.56K  /  4 Page

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    2SA921

PANASONIC[Panasonic Semiconductor]
Part No. 2SA921
OCR Text ...50.5 5.10.2 s Features 0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 123 2.30.2 2.540.15 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A s Electrical Characteristics Parameter Collector cutoff current Colle...
Description Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

File Size 36.24K  /  2 Page

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ... VDSS = 40V G S RDS(on) = 0.009 ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced proce...13 --- VDD = 20V --- ID = 60A ns --- RG = 3.6 --- RD = 0.33, See Fig. 10 Between lead, --- 6mm (0....
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

File Size 97.26K  /  8 Page

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    IRF1404L IRF1404S

IRF[International Rectifier]
Part No. IRF1404L IRF1404S
OCR Text ... VDSS = 40V G S RDS(on) = 0.004 ID = 162A Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced pro...13 160 200 240 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typic...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)

File Size 237.30K  /  10 Page

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    IRF1404

International Rectifier
Part No. IRF1404
OCR Text ... VDSS = 40V G S RDS(on) = 0.004 ID = 162A Description Seventh Generation HEXFET(R) Power MOSFETs from International Rectifier util...13 160 200 240 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typic...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)

File Size 105.33K  /  8 Page

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    IRF1704

International Rectifier
Part No. IRF1704
OCR Text ...wer MOSFET VDSS = 40V RDS(on) = 0.004 G ID = 170A S Description Specifically designed for Automotive applications, this HEXFET(R) p...13/02 IRF1704 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A)
POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)

File Size 100.05K  /  8 Page

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    IRF2804 IRF2804L IRF2804S

IRF[International Rectifier]
Part No. IRF2804 IRF2804L IRF2804S
OCR Text ...nt, steady state)j Typ. --- 0.50 --- --- Max. 0.45 --- 62 40 Units C/W HEXFET(R) is a registered trademark of International R...13 120 130 130 4.5 7.5 6450 1690 840 5350 1520 2210 --- --- 2.0 2.3 4.0 --- 20 250 200 -200 240 62 9...
Description 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 273.77K  /  12 Page

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text ....) @ VDS = 100V Lower RDS(ON) : 0.092 (Typ.) IRF530A BVDSS = 100 V RDS(on) = 0.11 ID = 14 A TO-220 1 2 3 1.Gate 2. Drain 3. So...13 14 55 36 27 4.5 12.8 --4.0 100 -100 10 100 0.11 -790 175 72 40 40 110 80 36 --nC ns pF A V ...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET

File Size 253.11K  /  7 Page

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    IRF840B IRFS840B IRFS840 IRF840

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF840B IRFS840B IRFS840 IRF840
OCR Text ...* * * * * 8.0A, 500V, RDS(on) = 0.8 @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tes...13.4 3.5 Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche En...
Description 500V N-Channel MOSFET

File Size 908.43K  /  10 Page

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