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  0.10-0.30v Datasheet PDF File

For 0.10-0.30v Found Datasheets File :: 38405    Search Time::7.093ms    
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    2SA2012 2SC5565

SANYO[Sanyo Semicon Device]
Part No. 2SA2012 2SC5565
OCR Text ...allowable power dissipation. 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications ( ) : 2SA2012 Absolute Maximum...10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21400TS (KOTO) TA-2520 No.6306-1/5 2SA2012/2S...
Description    DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications

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    2SA2044 2SC5710 2SA2044FA 2SC5710TP-FA

SANYO[Sanyo Semicon Device]
Matsshita / Panasonic
Part No. 2SA2044 2SC5710 2SA2044FA 2SC5710TP-FA
OCR Text ...45B [2SA2044 / 2SC5710] 6.5 5.0 4 Relay drivers, lamp drivers, motor drivers, strobes. Features * * * * * Adoption of FBET and M...10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52101 TS IM TA-3249 No.6915-1/5 2SA2044 / 2SC...
Description Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 9A I(C) | TO-252VAR
DC / DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP / NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications

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    2SA2048

Rohm CO.,LTD.
ROHM[Rohm]
Part No. 2SA2048
OCR Text ...nsions (Units : mm) TSMT3 1.9 0.95 0.95 (1) 2.8 1.6 0.4 (3) (2) 2.9 1.0MAX 0.16 (1)Base (2)Emitter (3)Collector 0.1...10 - pF VCB= -10V, IE=0A, f=1MHz Ton - 30 - ns IC= -1.0A Turn-on time IB1= -0.1A Tstg - 100 - ns IB2...
Description Medium power transistor (−30V, −1.0A)
Medium power transistor (-30V, -1.0A)

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    2SA2049

ROHM[Rohm]
Part No. 2SA2049
OCR Text ...ensions (Units : mm) MPT3 1.5 0.4 1.0 (1) 4.0 2.5 0.5 0.5 (3) 1.5 0.4 (1)Base (2)Collector (3)Emitter 0.4 Each...10 COLLECTOR CURRENT : IC (A) 1000 1ms 10ms SWITCHING TIME : (ns) -1 100ms DC -0.1 DC CU...
Description MEDIUM POWER TRANSISTOR

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    2SA2087

ROHM[Rohm]
Part No. 2SA2087
OCR Text ...ns (Unit : mm) ATV 6.8 2.5 0.65Max. 1.0 0.5 2.54 2.54 0.9 (1) (2) (3) (1) Emitter (2) Collector (3) Base 1.05 14.5 ...10 1000 10ms 1ms 500s COLLECTOR CURRENT : IC (A) -1 100ms DC DC CURRENT GAIN : hFE SW...
Description Power transistor

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    2SA2113

ROHM[Rohm]
Part No. 2SA2113
OCR Text ...yp. : -200mV at IC = -1A, IB = -0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5916 !Externa...10 COLLECTOR CURRENT : IC (A) 1000 Ta=25C VCC= -25V IC/IB=10/1 Tstg 100 1000 DC CURRENT GAIN :...
Description Medium power transistor ( 30V/2A)
Medium power transistor (−30V, −2A)
Medium power transistor (-30V, -2A)

File Size 42.97K  /  4 Page

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    2SA473

Wing Shing Computer Components
Part No. 2SA473
OCR Text ...T Test Condition VCB= -30V , IE=0 VEB= -5V , IC=0 VCE= -1V , IC=-0.1A IC=-2A , IB=-0.2A VCE= -2V , IC=-0.5A Min Typ Max -10 10 240 -0.8 100 Unit A A 70 V MHZ Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wing...
Description PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

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    2SB1011 B1011

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1011 B1011
OCR Text 0+0.5 -0.1 Unit: mm 3.20.2 Features * High collector-base voltage (Emitter open) VCBO * High collector-emitter voltage (Base open) ...10 -12 0 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 Ambient temperature Ta (C) Col...
Description 2SB1011
Silicon PNP triple diffusion planar type

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    2SB1073

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1073
OCR Text ... 4.50.1 1.60.2 1.50.1 1.0-0.2 +0.1 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP. Min...10 IB=-200A 800 -180A -160A -140A -120A -100A 400 -80A -60A 200 0.2 0 0 20 40 60 80 100 120 140 160 ...
Description Silicon PNP epitaxial planer type(For low-frequency amplification)

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    2SB1079

HITACHI[Hitachi Semiconductor]
Part No. 2SB1079
OCR Text ...- -- -- -- -- -- -- -- -- -- -- 0.6 3.5 Max -- -- -- -- -100 -1.0 20000 -2.0 -2.5 -3.0 -3.5 -- -- V V V V s s I C = -10 A, IB1 = -IB2 = -20 mA I C = -20 A, IB = -200 mA*1 Unit V V V V A mA Test conditions I C = -0.1 mA, IE = 0 I C = -25 mA,...
Description Silicon PNP Triple Diffused

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