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  20v.06 Datasheet PDF File

For 20v.06 Found Datasheets File :: 7841    Search Time::3.64ms    
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    FS70KM-06 FS70KM-06-A8

Renesas Electronics Corporation
Part No. FS70KM-06 FS70KM-06-A8
OCR Text ...teristics (Typical) 100 VGS = 20V 10V 8V 6V Output Characteristics (Typical) 50 VGS = 20V 10V 8V 6V PD = 35W Drain Current ID (A) ...06 Forward Transfer Admittance vs. Drain Current (Typical) Forward Transfer Admittance | yfs | (S)...
Description High-Speed Switching Use Nch Power MOS FET

File Size 168.00K  /  7 Page

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    FS5AS-06

Mitsubishi Electric Corporation
Powerex Power Semiconductors
Part No. FS5AS-06
OCR Text ...itions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 2A, VGS = 10V ID = 2A, VGS = 10V ID = 2A, VDS = 5...06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5.0 Tc = 25C Pulse...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 42.03K  /  4 Page

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    FS50VS-06

Mitsubishi Electric Corporation
Powerex Power Semiconductors
Part No. FS50VS-06
OCR Text ...itions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 10V ID = 25A, VDS ...06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0 TC = 25C Pulse...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 43.39K  /  4 Page

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    Renesas Electronics Corporation
Part No. FS50SM-06-15
OCR Text ...0 0 0.4 0.8 1.2 1.6 2.0 v gs = 20v 10v 8v 5v 6v 7v t c = 25? pulse test p d = 70w power dissipation derating curve case temperature t c...06 high-speed switching use 10 0 10 1 23457 10 2 23457 10 0 10 1 2 3 4 5 7 10 2 2 3 4 5 7 t c = 25?...
Description    HIGH-SPEED SWITCHING USE

File Size 92.58K  /  7 Page

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    FS30VS-06

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS30VS-06
OCR Text ...itions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 10V ID = 15A, VGS = 10V ID = 15A, VDS ...06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5.0 TC = 25C Pulse...
Description HIGH-SPEED SWITCHING USE

File Size 37.34K  /  4 Page

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    IPD75N04S4-06

Infineon Technologies AG
Part No. IPD75N04S4-06
OCR Text ...rce leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =75a - 5.0 5.9 m ? value...06 parameter symbol conditions unit min. typ. max. d y namic characteristics 1) input capacitance c ...
Description OptiMOS-T2 Power-Transistor

File Size 152.99K  /  9 Page

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    FS50VS-06

Mitsubishi Electric Semiconductor
Part No. FS50VS-06
OCR Text ...itions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 10V ID = 25A, VDS ...06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0 TC = 25C Pulse...
Description HIGH-SPEED SWITCHING USE

File Size 38.36K  /  4 Page

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    FS30AS-06

Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS30AS-06
OCR Text ...itions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 10V ID = 15A, VGS = 10V ID = 15A, VDS ...06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5.0 TC = 25C Pulse...
Description HIGH-SPEED SWITCHING USE

File Size 36.72K  /  4 Page

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